SrTiOs （STO） thin films were deposited on p-Si（100） substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency （RF） magnetron sputtering technique. Their structure and electrical propert...SrTiOs （STO） thin films were deposited on p-Si（100） substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency （RF） magnetron sputtering technique. Their structure and electrical properties were investigated. It was found that the transition from amorphous phase to polycrystalline phase occurred at the substrate temperatures 300-400℃. Their crystallinity became better when the substrate temperatures further increased. The dielectric and leakage current measurements were carried out by using the Si/STO/Pt metal-insulator-semiconductor （MIS） structures at room temperature. It was found that the fixed charge density decreased and both the interface trap density and the dielectric constant increased when the substrate temperatures were increased. The leakage current mechanisms for STO MIS structures with STO films prepared at 700℃ followed the space charge limited current （SCLC） under the low applied electric field and the Poole-Frenkel emission under the high one. In addition, the resistivity for films prepared at 700℃ was higher than 10^11Ω.cm under the voltage lower than 10V （corresponding to the electric field of 1.54×10^3kV.cm^-1）. It suggested that the STO films prepared at 700℃ were suitable for acting as the insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures.展开更多
TiO2-CeO2 films were deposited on soda-lime glass substrates at varied substrate temperatures by rf magnetron sputtering using 40% molar TiO2-60% molar CeO2 ceramic target in Ar：O2=95：5 atmosphere.The structure,surf...TiO2-CeO2 films were deposited on soda-lime glass substrates at varied substrate temperatures by rf magnetron sputtering using 40% molar TiO2-60% molar CeO2 ceramic target in Ar：O2=95：5 atmosphere.The structure,surface composition,UV-visible spectra of the films were measured by scanning electron microscopy and X-ray diffraction,and X-ray photoelectron spectroscopy,respectively.The experimental results show that the films are amorphous,there are only Ti^4＋ and Ce^4＋ on the surface of the films,the obtained TiO2-CeO2 films shou a good uniformity and high densification,and the films deposited on the glass can shield ultraviolet light without significant absorpition of visible light,the films deposited on substrates at room temperature and 220℃ absorb UV effectively.展开更多
基金Project supported by National Natural Science Foundation （Grant Nos 60221502 and 60223006） and Shanghai R＆D Foundation for Applied Materials （Grant No 0316）.
文摘SrTiOs （STO） thin films were deposited on p-Si（100） substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency （RF） magnetron sputtering technique. Their structure and electrical properties were investigated. It was found that the transition from amorphous phase to polycrystalline phase occurred at the substrate temperatures 300-400℃. Their crystallinity became better when the substrate temperatures further increased. The dielectric and leakage current measurements were carried out by using the Si/STO/Pt metal-insulator-semiconductor （MIS） structures at room temperature. It was found that the fixed charge density decreased and both the interface trap density and the dielectric constant increased when the substrate temperatures were increased. The leakage current mechanisms for STO MIS structures with STO films prepared at 700℃ followed the space charge limited current （SCLC） under the low applied electric field and the Poole-Frenkel emission under the high one. In addition, the resistivity for films prepared at 700℃ was higher than 10^11Ω.cm under the voltage lower than 10V （corresponding to the electric field of 1.54×10^3kV.cm^-1）. It suggested that the STO films prepared at 700℃ were suitable for acting as the insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures.
文摘TiO2-CeO2 films were deposited on soda-lime glass substrates at varied substrate temperatures by rf magnetron sputtering using 40% molar TiO2-60% molar CeO2 ceramic target in Ar：O2=95：5 atmosphere.The structure,surface composition,UV-visible spectra of the films were measured by scanning electron microscopy and X-ray diffraction,and X-ray photoelectron spectroscopy,respectively.The experimental results show that the films are amorphous,there are only Ti^4＋ and Ce^4＋ on the surface of the films,the obtained TiO2-CeO2 films shou a good uniformity and high densification,and the films deposited on the glass can shield ultraviolet light without significant absorpition of visible light,the films deposited on substrates at room temperature and 220℃ absorb UV effectively.
