Ⅰ. INTRODUCTION The coulomb interaction between electron and hole has been enhanced in the quasi-two-dimensional (2D)electronic system in quantum well or superlattice structure, especially by the potential confinemen...Ⅰ. INTRODUCTION The coulomb interaction between electron and hole has been enhanced in the quasi-two-dimensional (2D)electronic system in quantum well or superlattice structure, especially by the potential confinement effect along z direction. The exciton binding energy of 2D展开更多
I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength op...I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength optoelectronic devices with these structures have attracted much interest for the use in high-density optical information systems.展开更多
文摘Ⅰ. INTRODUCTION The coulomb interaction between electron and hole has been enhanced in the quasi-two-dimensional (2D)electronic system in quantum well or superlattice structure, especially by the potential confinement effect along z direction. The exciton binding energy of 2D
文摘I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength optoelectronic devices with these structures have attracted much interest for the use in high-density optical information systems.
