OPTICAL emission spectroscopy (OES) is generally used in diagnosis on the various plasma filmdeposition processes to understand the mechanism of film growth. However, although the de-position precursors have been pred...OPTICAL emission spectroscopy (OES) is generally used in diagnosis on the various plasma filmdeposition processes to understand the mechanism of film growth. However, although the de-position precursors have been predicted such as CN radicals and nitrogen atoms, up tonow no diagnostic work on CN_x film deposition process, as we know, has been reported yet.From previously reported research work, the properties of CN_x film display some obvious dif-ference. For instance, some CN_x films have extreme mechanical properties with hardness展开更多
文摘OPTICAL emission spectroscopy (OES) is generally used in diagnosis on the various plasma filmdeposition processes to understand the mechanism of film growth. However, although the de-position precursors have been predicted such as CN radicals and nitrogen atoms, up tonow no diagnostic work on CN_x film deposition process, as we know, has been reported yet.From previously reported research work, the properties of CN_x film display some obvious dif-ference. For instance, some CN_x films have extreme mechanical properties with hardness
