采用Ga As衬底增强/耗尽型赝配高电子迁移率晶体管（E/D PHEMT）工艺研制了一款6～10 GHz多功能微波单片集成电路（MMIC）。其集成了4个单刀双掷开关、6 bit数控移相器、6 bit数控衰减器、3个放大器和14 bit并口驱动电路。测试结果表明...采用Ga As衬底增强/耗尽型赝配高电子迁移率晶体管（E/D PHEMT）工艺研制了一款6～10 GHz多功能微波单片集成电路（MMIC）。其集成了4个单刀双掷开关、6 bit数控移相器、6 bit数控衰减器、3个放大器和14 bit并口驱动电路。测试结果表明：接收支路增益大于8 d B,1 d B压缩点输出功率大于3 d Bm;发射支路增益大于1 d B,1 d B压缩点输出功率大于8 d Bm。移相64态均方根误差小于3°,衰减64态均方根误差小于1 d B。在工作频带内接收和发射两种状态下,输入输出驻波比均小于1.5∶1。经过版图优化后,芯片尺寸为3.5 mm×5.1 mm。该多功能MMIC可用于微波收发组件,对传输信号进行幅相控制。展开更多
基于0.13μm RF SOI CMOS工艺,提出了一种应用于LTE;DD/FDD接收发射模块的低插入损耗的单刀双掷(SPDT)射频开关电路。该电路通过使用绝缘体上硅(SOI)工艺,以及特殊的MOS器件,让设计的开关具有比传统CMOS器件拥有更好的隔离性能,同时实...基于0.13μm RF SOI CMOS工艺,提出了一种应用于LTE;DD/FDD接收发射模块的低插入损耗的单刀双掷(SPDT)射频开关电路。该电路通过使用绝缘体上硅(SOI)工艺,以及特殊的MOS器件,让设计的开关具有比传统CMOS器件拥有更好的隔离性能,同时实现了更低的插入损耗,该电路通过流片后验证,在0.1~3GHz的频率范围内,插入损耗都低于0.5dB,隔离度平均大于30dB,输入功率0.1dB压缩点达到了34dBm,可以满足4代通信的标准。展开更多
A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capa...A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30--65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps 〈 4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30--64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5 × 0.95 mm2.展开更多
采用多个P IN管设计并制作了一种串/并联结构的宽带高隔离度微带单刀双掷(s ing le po le doub le throw,SPDT)开关.首先建立了所用型号的P IN管开路、短路的等效电路模型;然后借助于CAD软件Serenade进行了电路仿真和参数优化,得到了很...采用多个P IN管设计并制作了一种串/并联结构的宽带高隔离度微带单刀双掷(s ing le po le doub le throw,SPDT)开关.首先建立了所用型号的P IN管开路、短路的等效电路模型;然后借助于CAD软件Serenade进行了电路仿真和参数优化,得到了很好的仿真结果;最后设计出电路制版图并制作了经济实用的微带开关,经过实验测量达到了技术指标要求.展开更多
文摘采用Ga As衬底增强/耗尽型赝配高电子迁移率晶体管（E/D PHEMT）工艺研制了一款6～10 GHz多功能微波单片集成电路（MMIC）。其集成了4个单刀双掷开关、6 bit数控移相器、6 bit数控衰减器、3个放大器和14 bit并口驱动电路。测试结果表明：接收支路增益大于8 d B,1 d B压缩点输出功率大于3 d Bm;发射支路增益大于1 d B,1 d B压缩点输出功率大于8 d Bm。移相64态均方根误差小于3°,衰减64态均方根误差小于1 d B。在工作频带内接收和发射两种状态下,输入输出驻波比均小于1.5∶1。经过版图优化后,芯片尺寸为3.5 mm×5.1 mm。该多功能MMIC可用于微波收发组件,对传输信号进行幅相控制。
文摘基于0.13μm RF SOI CMOS工艺,提出了一种应用于LTE;DD/FDD接收发射模块的低插入损耗的单刀双掷(SPDT)射频开关电路。该电路通过使用绝缘体上硅(SOI)工艺,以及特殊的MOS器件,让设计的开关具有比传统CMOS器件拥有更好的隔离性能,同时实现了更低的插入损耗,该电路通过流片后验证,在0.1~3GHz的频率范围内,插入损耗都低于0.5dB,隔离度平均大于30dB,输入功率0.1dB压缩点达到了34dBm,可以满足4代通信的标准。
基金supported by the National Natural Science Foundation of China(Nos.6133100661372021)
文摘A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30--65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps 〈 4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30--64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5 × 0.95 mm2.
文摘采用多个P IN管设计并制作了一种串/并联结构的宽带高隔离度微带单刀双掷(s ing le po le doub le throw,SPDT)开关.首先建立了所用型号的P IN管开路、短路的等效电路模型;然后借助于CAD软件Serenade进行了电路仿真和参数优化,得到了很好的仿真结果;最后设计出电路制版图并制作了经济实用的微带开关,经过实验测量达到了技术指标要求.
