摘要
基于滤波器的设计方法,实现了一款适用于毫米波通信的宽频带单刀双掷(SPDT)开关。为了实现宽频带和低插入损耗,采用100 nm GaN-on-Si HEMT器件及行波式开关设计方法,同时采用四枝节的结构,实现对射频信号的全反射,以此获得更高的隔离度。在0 V和-15 V的栅偏置电压下,在室温环境中测试的结果表明:在30~44 GHz频带内,SPDT开关具有良好的回波损耗,其插入损耗低于1.5 dB,隔离度高于34 dB,并且在36 GHz下的输入1 dB功率压缩点优于39.2 dBm。芯片面积为1.7 mm×1.2 mm。
A wideband single-pole double-throw(SPDT)switch based on a method of filter design for millimeter-wave communication was realized.The 100 nm GaN-on-Si HEMT device and traveling wave switch design method were used to achieve wide bandwidth and low insertion loss.Additionally,a four-branch structure was adopted to achieve total reflection of the input RF signal,leading to higher isolation.Under the bias voltages of 0 V and-15 V,the measurement results tested in the room temperature environment show that in 30-44 GHz,the SPDT switch has good return loss,with insertion loss less than 1.5 dB,isolation higher than 34 dB.The input 1 dB power compression point is better than 39.2 dBm at 36 GHz.The total chip size is 1.7 mm×1.2 mm.
作者
杨颖
张志浩
袁丹丹
章国豪
YANG Ying;ZHANG Zhihao;YUAN Dandan;ZHANG Guohao(School of Integrated Circuits,Guangdong University of Technology,Guangzhou,510006,CHN;Synergy Innovation Institution of GDUT,Heyuan,Guangdong,517000,CHN;School of Information Engineering,Guangdong University of Technology,Guangzhou,510006,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第5期381-385,391,共6页
Research & Progress of SSE
基金
国家重点研发计划资助项目(2018YFB1802100)
广东省“珠江人才计划”本土创新科研团队项目(2017BT01X168)
5G通信微基站用的高性能射频功率放大器芯片的研发及产业化项目(202009030006)。
