为了制备应用于太阳电池的优质多晶硅薄膜,研究了非晶硅薄膜的快速光热退火技术。先利用 PECVD 设备沉积非晶硅薄膜,然后放入快速光热退火炉中进行退火。退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表...为了制备应用于太阳电池的优质多晶硅薄膜,研究了非晶硅薄膜的快速光热退火技术。先利用 PECVD 设备沉积非晶硅薄膜,然后放入快速光热退火炉中进行退火。退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。研究表明退火温度、退火时间对非晶硅薄膜的晶化都有很大的影响,光热退火前先用常规高温炉预热有助于增大多晶硅薄膜的晶粒尺寸和暗电导率。展开更多
Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and op...Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure(δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure(L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.展开更多
Study of the quantum size confinement effect has attracted much attention since the first observation of visible photoluminescence (PL) from porous silicon at room temperature. Recently great interest has risen in nan...Study of the quantum size confinement effect has attracted much attention since the first observation of visible photoluminescence (PL) from porous silicon at room temperature. Recently great interest has risen in nanometer silicon films, because the porous silicon of loosened structure is found difficult to be used in optoelectronic function. A blue/green photoluminescence has been observed from Si thin film with nanostructures prepared by α-Si: H after rapid thermal annealing (RTA) treatments by Zhu et al. But evolution of the hydrogen from as-deposited α-Si:H film by RTA tends to break the thin films into pieces easily.展开更多
文摘为了制备应用于太阳电池的优质多晶硅薄膜,研究了非晶硅薄膜的快速光热退火技术。先利用 PECVD 设备沉积非晶硅薄膜,然后放入快速光热退火炉中进行退火。退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。研究表明退火温度、退火时间对非晶硅薄膜的晶化都有很大的影响,光热退火前先用常规高温炉预热有助于增大多晶硅薄膜的晶粒尺寸和暗电导率。
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure(δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure(L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.
文摘Study of the quantum size confinement effect has attracted much attention since the first observation of visible photoluminescence (PL) from porous silicon at room temperature. Recently great interest has risen in nanometer silicon films, because the porous silicon of loosened structure is found difficult to be used in optoelectronic function. A blue/green photoluminescence has been observed from Si thin film with nanostructures prepared by α-Si: H after rapid thermal annealing (RTA) treatments by Zhu et al. But evolution of the hydrogen from as-deposited α-Si:H film by RTA tends to break the thin films into pieces easily.
