This paper describes the fabrication of backlight units（BLUs） for a liquid crystal display（LCD） based on a novel planar-gate electron source with patterned carbon nanotubes（CNTs） formed by electrophoretic deposi...This paper describes the fabrication of backlight units（BLUs） for a liquid crystal display（LCD） based on a novel planar-gate electron source with patterned carbon nanotubes（CNTs） formed by electrophoretic deposition. The electric field distributions and electron trajectories of this triode structure are simulated according to Ansys software.The device structure is optimized by supporting numerical simulation.The field emission results show that the emission current depends strongly on the cathode-gate gap and the gate voltage.Direct observation of the luminous images on a phosphor screen reveals that the electron beams undergo a noticeable expansion along the lateral direction with increasing gate voltage,which is in good agreement with the simulation results.The luminous efficiency and luminance of the fabricated device reaches 49.1 lm/W and 5500 cd/m^2,respectively.All results indicate that the novel planar-gate electron source with patterned CNTs may lead to practical applications for an electron source based on a flat lamp for BLUs in LCD.展开更多
This paper proposes a new shallow trench and planar gate MOSFET （TPMOS） structure based on VD- MOS technology, in which the shallow trench is located at the center of the n- drift region between the cells under a pl...This paper proposes a new shallow trench and planar gate MOSFET （TPMOS） structure based on VD- MOS technology, in which the shallow trench is located at the center of the n- drift region between the cells under a planar polysilicon gate. Compared with the conventional VDMOS, the proposed TPMOS device not only im- proves obviously the trade-off relation between on-resistance and breakdown voltage, and reduces the dependence of on-resistance and breakdown voltage on gate length, but also the manufacture process is compatible with that of the VDMOS without a shallow trench, thus the proposed TPMOS can offer more freedom in device design and fabrication.展开更多
A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculatio...A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculation and 3D simulation, as well as the experiment data, show that the two independent split dual gates can provide dynamical control of the device characteristics, such as threshold voltage （Vt） and sub-threshold swing （SS）, as well as the device saturated current. The PSDG MOSFET transistor leakage current （loft） can be reduced as much as 78% of the traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our conventional 0.18 μm logic process flow.展开更多
碳化硅MOSFETs开关速率快,耐压高,在逆变器应用领域前景广阔。平面栅MOSFETs因其成熟的工艺是最先被商业化的器件。在平面栅MOSFETs的设计中,降低导通电阻和提高芯片的电流密度是重要的开发目标。基于自主研制的1200 V及1700 V SiC MOSF...碳化硅MOSFETs开关速率快,耐压高,在逆变器应用领域前景广阔。平面栅MOSFETs因其成熟的工艺是最先被商业化的器件。在平面栅MOSFETs的设计中,降低导通电阻和提高芯片的电流密度是重要的开发目标。基于自主研制的1200 V及1700 V SiC MOSFETs,研究了载流子扩展层技术、JFET注入技术以及元胞结构对器件电学特性的影响。测试结果表明采用方形元胞设计的SiC MOSFET的电流明显大于采用条形元胞设计的电流,JFET注入对阈值电压的影响比载流子扩展层技术更小。展开更多
针对机车牵引用3300 V/1500 A IGBT功率模块,采用TCAD仿真工具研究了不同栅极结构对器件静态和动态参数的影响。当平面栅IGBT采用栅极台面结构且台面厚度逐渐降低时,器件的静态阻断电压提高,开关损耗降低,但是器件的开关时间增加;此外,...针对机车牵引用3300 V/1500 A IGBT功率模块,采用TCAD仿真工具研究了不同栅极结构对器件静态和动态参数的影响。当平面栅IGBT采用栅极台面结构且台面厚度逐渐降低时,器件的静态阻断电压提高,开关损耗降低,但是器件的开关时间增加;此外,关断时过快的dv/dt会引起栅极电压振荡,开启时过快的di/dt会引起很大的电流过冲,导致器件应用的可靠性降低。在机车牵引的应用环境下,IGBT的栅极结构参数需要从电学参数和可靠性两个方面进行折中设计。展开更多
This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, di...This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.展开更多
基金supported by the National Natural Science Fotndation of China(Nos.61106053,61101169)the Technology Projects of Department of Education,Fujian Province,China(No.JA11014)
文摘This paper describes the fabrication of backlight units（BLUs） for a liquid crystal display（LCD） based on a novel planar-gate electron source with patterned carbon nanotubes（CNTs） formed by electrophoretic deposition. The electric field distributions and electron trajectories of this triode structure are simulated according to Ansys software.The device structure is optimized by supporting numerical simulation.The field emission results show that the emission current depends strongly on the cathode-gate gap and the gate voltage.Direct observation of the luminous images on a phosphor screen reveals that the electron beams undergo a noticeable expansion along the lateral direction with increasing gate voltage,which is in good agreement with the simulation results.The luminous efficiency and luminance of the fabricated device reaches 49.1 lm/W and 5500 cd/m^2,respectively.All results indicate that the novel planar-gate electron source with patterned CNTs may lead to practical applications for an electron source based on a flat lamp for BLUs in LCD.
基金Project supported by the Special Science and Technology Plan of Education Bureau of Shaanxi Province,China(No.08JK379)
文摘This paper proposes a new shallow trench and planar gate MOSFET （TPMOS） structure based on VD- MOS technology, in which the shallow trench is located at the center of the n- drift region between the cells under a planar polysilicon gate. Compared with the conventional VDMOS, the proposed TPMOS device not only im- proves obviously the trade-off relation between on-resistance and breakdown voltage, and reduces the dependence of on-resistance and breakdown voltage on gate length, but also the manufacture process is compatible with that of the VDMOS without a shallow trench, thus the proposed TPMOS can offer more freedom in device design and fabrication.
文摘A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculation and 3D simulation, as well as the experiment data, show that the two independent split dual gates can provide dynamical control of the device characteristics, such as threshold voltage （Vt） and sub-threshold swing （SS）, as well as the device saturated current. The PSDG MOSFET transistor leakage current （loft） can be reduced as much as 78% of the traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our conventional 0.18 μm logic process flow.
文摘碳化硅MOSFETs开关速率快,耐压高,在逆变器应用领域前景广阔。平面栅MOSFETs因其成熟的工艺是最先被商业化的器件。在平面栅MOSFETs的设计中,降低导通电阻和提高芯片的电流密度是重要的开发目标。基于自主研制的1200 V及1700 V SiC MOSFETs,研究了载流子扩展层技术、JFET注入技术以及元胞结构对器件电学特性的影响。测试结果表明采用方形元胞设计的SiC MOSFET的电流明显大于采用条形元胞设计的电流,JFET注入对阈值电压的影响比载流子扩展层技术更小。
文摘针对机车牵引用3300 V/1500 A IGBT功率模块,采用TCAD仿真工具研究了不同栅极结构对器件静态和动态参数的影响。当平面栅IGBT采用栅极台面结构且台面厚度逐渐降低时,器件的静态阻断电压提高,开关损耗降低,但是器件的开关时间增加;此外,关断时过快的dv/dt会引起栅极电压振荡,开启时过快的di/dt会引起很大的电流过冲,导致器件应用的可靠性降低。在机车牵引的应用环境下,IGBT的栅极结构参数需要从电学参数和可靠性两个方面进行折中设计。
基金supported by the National Science Foundation for Young Scholars of China(No.11105092)the Shenzhen Science and Technology Development Funds(Nos.JC201005280565A,JC201005280558A,GJHS20120621142118853)
文摘This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.
