对于硅上液晶(Liquid Crystal on Silicon,LCoS)器件而言,由于其像素间距较小,当某一像素施加电压后,会影响其相邻不加电压的像素的光学特性。为了改善这一情况,本文通过建立一种常白型LCoS的三维光学模型,研究了3种参数对相邻不加电像...对于硅上液晶(Liquid Crystal on Silicon,LCoS)器件而言,由于其像素间距较小,当某一像素施加电压后,会影响其相邻不加电压的像素的光学特性。为了改善这一情况,本文通过建立一种常白型LCoS的三维光学模型,研究了3种参数对相邻不加电像素边缘的影响。结果表明:(1)相邻像素边缘暗态的位置和面积会随着液晶分子取向的改变而改变,当液晶分子取向方向为45°时,相邻像素边缘受影响的程度最小;(2)液晶盒的厚度越大,相邻像素边缘受影响的程度越大;(3)像素间距对相邻像素边缘的影响是变化的。本文条件下,当像素间距为0.7μm时,加电的中央像素对周围像素的反射率的影响最小。本研究的结论对高分辨率LCoS的设计和制备具有一定的指导意义。展开更多
Based on the analysis of the groove images in gas metal arc welding with small slope angle, a new algorithm of the groove edge location is presented. The groove edge was effectively detected by combining Roberts Detec...Based on the analysis of the groove images in gas metal arc welding with small slope angle, a new algorithm of the groove edge location is presented. The groove edge was effectively detected by combining Roberts Detector with the general non linear gradient operator. In addition, using Norton Quadratic Polynomial Interpolation, the edge location precision reached sub pixel level. The experimental results show that the edge detection system works well under the condition of short transfer arc welding.展开更多
文摘对于硅上液晶(Liquid Crystal on Silicon,LCoS)器件而言,由于其像素间距较小,当某一像素施加电压后,会影响其相邻不加电压的像素的光学特性。为了改善这一情况,本文通过建立一种常白型LCoS的三维光学模型,研究了3种参数对相邻不加电像素边缘的影响。结果表明:(1)相邻像素边缘暗态的位置和面积会随着液晶分子取向的改变而改变,当液晶分子取向方向为45°时,相邻像素边缘受影响的程度最小;(2)液晶盒的厚度越大,相邻像素边缘受影响的程度越大;(3)像素间距对相邻像素边缘的影响是变化的。本文条件下,当像素间距为0.7μm时,加电的中央像素对周围像素的反射率的影响最小。本研究的结论对高分辨率LCoS的设计和制备具有一定的指导意义。
文摘Based on the analysis of the groove images in gas metal arc welding with small slope angle, a new algorithm of the groove edge location is presented. The groove edge was effectively detected by combining Roberts Detector with the general non linear gradient operator. In addition, using Norton Quadratic Polynomial Interpolation, the edge location precision reached sub pixel level. The experimental results show that the edge detection system works well under the condition of short transfer arc welding.
