从电磁方程的解析解出发,分析高对称性van der Pauw disk装置的异常磁电阻效应,重点研究该体系的几何非均匀性与物理非均匀性对整体磁电阻效应的影响.通过定义三个非均匀参数表征体系的非均匀性,给出该装置中电磁输运性质随非均匀系数...从电磁方程的解析解出发,分析高对称性van der Pauw disk装置的异常磁电阻效应,重点研究该体系的几何非均匀性与物理非均匀性对整体磁电阻效应的影响.通过定义三个非均匀参数表征体系的非均匀性,给出该装置中电磁输运性质随非均匀系数的变化.计算结果表明,体系的磁电阻比值在一定的几何非均匀结构下达到最优化,整个装置在磁场下呈现出良好的开关效应.同时,材料在迁移率和电阻率上的非均匀性对异常磁电阻效应产生明显影响.特别地,组分电阻率的差别导致异常磁电阻效应出现符号翻转.展开更多
In this paper, by using the transfer matrix method, we theoretically investigate the magnetoresistance （MR） effect in a two-dimensional electron gas （2DEG） modulated by two Schottky metal （SM） stripes and two fe...In this paper, by using the transfer matrix method, we theoretically investigate the magnetoresistance （MR） effect in a two-dimensional electron gas （2DEG） modulated by two Schottky metal （SM） stripes and two ferromagnetic （FM） stripes on the top and bottom of the 2DEG. From the numerical results, we find that a considerable MR effect can be achieved in this device due to the significant difference between electron transmissions through the parallel and antiparallel magnetization configurations. We also find that the MR ratio obviously depends on the magnetic strength and the electric-barrier height as well as the distance between the FM and SM stripes. These characters are very helpful for making the new type of MR devices according to their practical applications.展开更多
文摘从电磁方程的解析解出发,分析高对称性van der Pauw disk装置的异常磁电阻效应,重点研究该体系的几何非均匀性与物理非均匀性对整体磁电阻效应的影响.通过定义三个非均匀参数表征体系的非均匀性,给出该装置中电磁输运性质随非均匀系数的变化.计算结果表明,体系的磁电阻比值在一定的几何非均匀结构下达到最优化,整个装置在磁场下呈现出良好的开关效应.同时,材料在迁移率和电阻率上的非均匀性对异常磁电阻效应产生明显影响.特别地,组分电阻率的差别导致异常磁电阻效应出现符号翻转.
基金supported by Hubei Province Key Laboratory of Systems Science in Metallurgical Process,Wuhan University of Science and Technology(No.C201018)
文摘In this paper, by using the transfer matrix method, we theoretically investigate the magnetoresistance （MR） effect in a two-dimensional electron gas （2DEG） modulated by two Schottky metal （SM） stripes and two ferromagnetic （FM） stripes on the top and bottom of the 2DEG. From the numerical results, we find that a considerable MR effect can be achieved in this device due to the significant difference between electron transmissions through the parallel and antiparallel magnetization configurations. We also find that the MR ratio obviously depends on the magnetic strength and the electric-barrier height as well as the distance between the FM and SM stripes. These characters are very helpful for making the new type of MR devices according to their practical applications.
