摘要
介绍了不同实验条件下 ,锑化铟磁阻器件电阻与所加直流磁感应强度的关系 ,并对其曲线进行了拟合与讨论 .通过施加低频交流磁场的方法 ,得到了磁阻器件在小于 0 .0 6
The magnetoresistance effect of the InSb sensor is measured under different experimental conditions, the derived results are fitted and discussed. The sensor's frequency doubling effect on electromagnetic signal is given under certain conditions.
出处
《物理实验》
北大核心
2001年第10期46-48,共3页
Physics Experimentation
