Pressure sensors are the essential equipments in the field of pressure measurement. In this work, we propose a temperature compensation fiber Bragg grating （FBG） pressure sensor based on the plane diaphragm. The pla...Pressure sensors are the essential equipments in the field of pressure measurement. In this work, we propose a temperature compensation fiber Bragg grating （FBG） pressure sensor based on the plane diaphragm. The plane diaphragm and pressure sensitivity FBG （PS FBG） are used as the pressure sensitive components, and the temperature compensation FBG （TC FBG） is used to improve the temperature cross-sensitivity. Mechanical deformation model and deformation characteristics simulation analysis of the diaphragm are presented. The measurement principle and theoretical analysis of the mathematical relationship between the FBG central wavelength shift and pressure of the sensor are introduced. The sensitivity and measure range can be adjusted by utilizing the different materials and sizes of the diaphragm to accommodate different measure environments. The performance experiments are carried out, and the results indicate that the pressure sensitivity of the sensor is 35.7pm/MPa in a range from 0MPa to 50MPa and has good linearity with a linear fitting correlation coefficient of 99.95%. In addition, the sensor has the advantages of low frequency chirp and high stability, which can be used to measure pressure in mining engineering, civil engineering, or other complex environment.展开更多
A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique,...A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.展开更多
A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap ref-erence is proposed.A dual-differential-pair amplifier was employed to add compensation with a high-order term of...A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap ref-erence is proposed.A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap.To reduce the offset of the amplifier and noise of the bandgap reference,input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current,these MOSFETs all work in weak inversion.The voltage reference's temperature curvature has been further corrected by trimming a switched resistor network.The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO).The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)'s 0.35-μm CMOS process,and the temperature coefficient (TC) was measured to be only 2.1×10 6/°C over the temperature range of 40-125 °C after trimming.The power supply rejection (PSR) was 100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.展开更多
为提高低压差线性稳压器(Low-DropOut Linear Regulator,LDO)的稳定性并降低前馈电路所产生的噪声,提出了一种生成自适应补偿零点的低噪声前馈电路。该前馈电路通过镜像调整管的负载电流,通过低值反馈电阻形成高增益反馈信号,与LDO输出...为提高低压差线性稳压器(Low-DropOut Linear Regulator,LDO)的稳定性并降低前馈电路所产生的噪声,提出了一种生成自适应补偿零点的低噪声前馈电路。该前馈电路通过镜像调整管的负载电流,通过低值反馈电阻形成高增益反馈信号,与LDO输出电压经反馈网络传递给反馈端的信号耦合形成由负载电容、负载电流控制的可控零点,可有效提高LDO电路整体的稳定性。此外,电路内部加入了产生动态极点的自适应电流补偿电路以保证次极点不会对环路的相位裕度产生影响。基于0.18μm BCD工艺设计,该电路在0~800 mA的宽负载范围、5 V输入3.3 V输出下相位裕度均高于48°,适用负载电容范围≥1μF,同时该LDO在10~100 kHz的频率范围内输出噪声仅为5.0617μVrms。展开更多
文摘Pressure sensors are the essential equipments in the field of pressure measurement. In this work, we propose a temperature compensation fiber Bragg grating （FBG） pressure sensor based on the plane diaphragm. The plane diaphragm and pressure sensitivity FBG （PS FBG） are used as the pressure sensitive components, and the temperature compensation FBG （TC FBG） is used to improve the temperature cross-sensitivity. Mechanical deformation model and deformation characteristics simulation analysis of the diaphragm are presented. The measurement principle and theoretical analysis of the mathematical relationship between the FBG central wavelength shift and pressure of the sensor are introduced. The sensitivity and measure range can be adjusted by utilizing the different materials and sizes of the diaphragm to accommodate different measure environments. The performance experiments are carried out, and the results indicate that the pressure sensitivity of the sensor is 35.7pm/MPa in a range from 0MPa to 50MPa and has good linearity with a linear fitting correlation coefficient of 99.95%. In addition, the sensor has the advantages of low frequency chirp and high stability, which can be used to measure pressure in mining engineering, civil engineering, or other complex environment.
文摘A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.
基金Project (No.2008ZX01020-001) supported by the National Science and Technology Major Project,China
文摘A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap ref-erence is proposed.A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap.To reduce the offset of the amplifier and noise of the bandgap reference,input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current,these MOSFETs all work in weak inversion.The voltage reference's temperature curvature has been further corrected by trimming a switched resistor network.The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO).The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)'s 0.35-μm CMOS process,and the temperature coefficient (TC) was measured to be only 2.1×10 6/°C over the temperature range of 40-125 °C after trimming.The power supply rejection (PSR) was 100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.
