为了满足移动通信系统中功率放大器宽频带和高效率的需求,采用阶梯阻抗网络实现宽带匹配电路,设计了一款高效率连续逆F类功率放大器。选用CGH40010F GaN HEMT晶体管,通过对连续逆F类功率放大器的理论分析,并且结合ADS负载牵引与源牵引仿...为了满足移动通信系统中功率放大器宽频带和高效率的需求,采用阶梯阻抗网络实现宽带匹配电路,设计了一款高效率连续逆F类功率放大器。选用CGH40010F GaN HEMT晶体管,通过对连续逆F类功率放大器的理论分析,并且结合ADS负载牵引与源牵引仿真,提取各频点的最佳负载阻抗和源阻抗,设计阶梯阻抗匹配电路,最终实现了一款宽带高效率功率放大器。测试结果表明,该功率放大器在3.2~3.8 GHz频段内,增益大于14 dB,增益平坦度小于±0.4 dB,饱和输出功率为40.6~40.9 dBm,最大漏极效率为64%~68%。该功率放大器的测试性能良好,可以为宽频带高效率功率放大器的设计提供参考。展开更多
传统的F类和逆F类功率放大器的带宽不宽,且对于功放输出信号的谐波控制比较严格。在连续类功放理论的基础上,设计了一款在工作带宽内连续F类和连续逆F类模式转换的功率放大器。设计的功放采用了Cree公司的CGH40010F GaN HEMT晶体管。通...传统的F类和逆F类功率放大器的带宽不宽,且对于功放输出信号的谐波控制比较严格。在连续类功放理论的基础上,设计了一款在工作带宽内连续F类和连续逆F类模式转换的功率放大器。设计的功放采用了Cree公司的CGH40010F GaN HEMT晶体管。通过调整功放管输出端的谐波控制网络,控制谐波阻抗在Smith圆图中位置分布,从而在带宽内同时实现连续F类和连续逆F类的工作模式。制作了测试板,结果表明在2.4～4.2 GHz的带宽内,增益在11 dB以上,漏极效率为55%～82%,输出功率在39.5～41.9 dBm。采用了10 MHz的LTE单载波信号进行功放的数字预失真测试,功放的输出ACPR改善了6 dB以上。展开更多
An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influ...An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.展开更多
为了更清晰地了解逆F类功率放大器通过规整漏极电压和电流波形实现高效率的本质,对其漏极电压波形进行了理论分析和仿真验证。结果表明,在仅考虑二、三次谐波,且当谐波比例k=1/4时,v(θ)波形最平坦,最近似于半正弦波。利用电磁软件仿真...为了更清晰地了解逆F类功率放大器通过规整漏极电压和电流波形实现高效率的本质,对其漏极电压波形进行了理论分析和仿真验证。结果表明,在仅考虑二、三次谐波,且当谐波比例k=1/4时,v(θ)波形最平坦,最近似于半正弦波。利用电磁软件仿真设计并制作了一款k=0.271的逆F类功率放大器,经测试在输出功率为36.33 d Bm时,功率附加效率达到了71%。展开更多
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016801)
文摘An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.
文摘为了更清晰地了解逆F类功率放大器通过规整漏极电压和电流波形实现高效率的本质,对其漏极电压波形进行了理论分析和仿真验证。结果表明,在仅考虑二、三次谐波,且当谐波比例k=1/4时,v(θ)波形最平坦,最近似于半正弦波。利用电磁软件仿真设计并制作了一款k=0.271的逆F类功率放大器,经测试在输出功率为36.33 d Bm时,功率附加效率达到了71%。
