From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field...From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field-effect transistors （sample A and sample B for three and four times multiple ion-implantation channel region respectively） fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.展开更多
Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by u...Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.展开更多
目的观察侧壁开窗上颌窦底提升术中应用Bio-Oss骨粉、Bio-Oss骨粉+浓缩生长因子(CGF)、Sticky bone 3种植骨材料的临床疗效。方法2021年2月—2022年2月黄河三门峡医院诊治因上颌后牙区牙列缺损且上颌窦底剩余骨高度(RBH)不足需行种植修...目的观察侧壁开窗上颌窦底提升术中应用Bio-Oss骨粉、Bio-Oss骨粉+浓缩生长因子(CGF)、Sticky bone 3种植骨材料的临床疗效。方法2021年2月—2022年2月黄河三门峡医院诊治因上颌后牙区牙列缺损且上颌窦底剩余骨高度(RBH)不足需行种植修复的患者74例,行侧壁开窗上颌窦底提升术、延期行种植体植入术,根据上颌窦底提升术中植骨材料分为Bio-Oss骨粉组(单纯Bio-Oss骨粉)24例、Bio-Oss骨粉+CGF组(Bio-Oss骨粉与自体CGF混合物)25例、Sticky bone组(Bio-Oss骨粉与自体CGF、自体纤维蛋白混合物)25例,比较3组体质量指数及术后疼痛评分、面部肿胀高度等,种植体植入即刻、种植体植入术后6个月及种植体功能负载12个月时种植体稳定系数(ISQ),种植体植入前、种植体植入即刻、种植体植入术后6个月及种植体功能负载12个月时上颌窦底RBH。结果3组糖尿病、冠心病、吸烟比率及体质量指数、术后疼痛评分、面部肿胀高度比较差异均无统计学意义(P>0.05)。种植体植入即刻、种植体植入术后6个月及种植体功能负载12个月时Sticky bone组种植体ISQ值(77.88±0.46、80.34±0.35、82.45±0.31)均高于Bio-Oss+CGF组(76.45±0.25、78.45±0.94、80.11±0.24)、Bio-Oss骨粉组(75.11±0.36、77.22±0.32、79.45±0.37)(P<0.05),Bio-Oss+CGF组均高于Bio-Oss骨粉组(P<0.05);3组种植体植入即刻、种植体植入术后6个月及种植体功能负载12个月时种植体ISQ值均依次升高(P<0.05)。种植体植入前3组上颌窦底RBH比较差异无统计学意义(P>0.05);种植体植入即刻、种植体植入术后6个月及种植体功能负载12个月时Sticky bone组上颌窦底RBH[(13.88±0.45)、(12.75±0.36)、(12.64±0.31)mm]均高于Bio-Oss+CGF组[(13.45±0.25)、(12.41±0.47)、(11.78±0.85)mm]、Bio-Oss骨粉组[(13.17±0.86)、(12.13±0.66)、(11.41±0.14)mm](P<0.05),Bio-Oss+CGF组与Bio-Oss骨粉组比较差异均无统计学意义(P>0.05);Bio-Oss+CGF组、Bio-Oss骨粉组展开更多
文摘From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field-effect transistors （sample A and sample B for three and four times multiple ion-implantation channel region respectively） fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.
文摘Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.
