摘要
Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.
Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.
