The controllable synthesis of complicated nanostructures in advanced two-dimensional(2D)semiconductors,such as periodic regular hole arrays,is essential and remains immature.Here,we report a green,facile,highly contro...The controllable synthesis of complicated nanostructures in advanced two-dimensional(2D)semiconductors,such as periodic regular hole arrays,is essential and remains immature.Here,we report a green,facile,highly controlled synthetic method to efficiently pattern 2D semiconductors,such as periodic regular hexagonal-shaped hole arrays(HHA),in 2D-TMDs.Combining the production of artificial defect arrays through laser irradiation with anisotropic annealing etching,we created HHA with different arrangements,controlled hole sizes,and densities in bilayer WS_(2).Atomic force microscopy(AFM),Raman,photoluminescence(PL),and scanning transmission electron microscopy(STEM)characterization show that the 2D semiconductors have high quality with atomical clean and sharp edges as well as undamaged crystals in the unetched region.Furthermore,other nanostructures,such as nanoribbons and periodic regular triangular-shaped 2D-TMD arrays,can be fabricated.This kind of 2D semiconductors fabrication strategy is general and can be extended to a series of 2D materials.Density functional theory(DFT)calculations show that one WS_(2)molecule from the edges of the laser-irradiated holed region exhibits a robust etching activation,making selective etching at the artificial defects and the fabrication of regular 2D semiconductors possible.展开更多
In order to meet the rapid needs of processing square hole in mechanical equipment, the paper expounds the square hole processing method： planetary wheel method, and analyze the principle of tooling structure and pro...In order to meet the rapid needs of processing square hole in mechanical equipment, the paper expounds the square hole processing method： planetary wheel method, and analyze the principle of tooling structure and process with computer graphics parameters design. The results that, as long as the appropriate parameters, using the above method not only can punch the square hole, can also be processed triangle, the five angle and hexagonal regular polygon holes. The square hole processing method can provide theoretical basis and engineering reliable reference for related engineering and technical personnel.展开更多
Using the complex variable function method and the technique of conformal mapping, the anti-plane shear problem of an elliptic hole with asymmetric colfinear cracks in a one-dimensional hexagonal quasi-crystal is solv...Using the complex variable function method and the technique of conformal mapping, the anti-plane shear problem of an elliptic hole with asymmetric colfinear cracks in a one-dimensional hexagonal quasi-crystal is solved, and the exact analytic solutions of the stress intensity factors （SIFs） for mode Ⅲ problem are obtained. Under the limiting conditions, the present results reduce to the Griffith crack and many new results obtained as well, such as the circular hole with asymmetric collinear cracks, the elliptic hole with a straight crack, the mode T crack, the cross crack and so on. As far as the phonon field is concerned, these results, which play an important role in many practical and theoretical applications, are shown to be in good agreement with the classical results.展开更多
基金National Key R&D Program of the Ministry of Science and Technology of China,Grant/Award Number:2022YFA1203801The National Natural Science Foundation of China,Grant/Award Numbers:51991340,51991343,52221001,62174051+1 种基金The Hunan Key R&D Program Project,Grant/Award Number:2022GK2005Ningbo Natural Science Foundation,Grant/Award Number:2023J023。
文摘The controllable synthesis of complicated nanostructures in advanced two-dimensional(2D)semiconductors,such as periodic regular hole arrays,is essential and remains immature.Here,we report a green,facile,highly controlled synthetic method to efficiently pattern 2D semiconductors,such as periodic regular hexagonal-shaped hole arrays(HHA),in 2D-TMDs.Combining the production of artificial defect arrays through laser irradiation with anisotropic annealing etching,we created HHA with different arrangements,controlled hole sizes,and densities in bilayer WS_(2).Atomic force microscopy(AFM),Raman,photoluminescence(PL),and scanning transmission electron microscopy(STEM)characterization show that the 2D semiconductors have high quality with atomical clean and sharp edges as well as undamaged crystals in the unetched region.Furthermore,other nanostructures,such as nanoribbons and periodic regular triangular-shaped 2D-TMD arrays,can be fabricated.This kind of 2D semiconductors fabrication strategy is general and can be extended to a series of 2D materials.Density functional theory(DFT)calculations show that one WS_(2)molecule from the edges of the laser-irradiated holed region exhibits a robust etching activation,making selective etching at the artificial defects and the fabrication of regular 2D semiconductors possible.
文摘In order to meet the rapid needs of processing square hole in mechanical equipment, the paper expounds the square hole processing method： planetary wheel method, and analyze the principle of tooling structure and process with computer graphics parameters design. The results that, as long as the appropriate parameters, using the above method not only can punch the square hole, can also be processed triangle, the five angle and hexagonal regular polygon holes. The square hole processing method can provide theoretical basis and engineering reliable reference for related engineering and technical personnel.
基金supported by the National Natural Science Foundation of China (Grant No 10761005)the Inner Mongolia Natural Science Foundation of China (Grant No 200607010104)
文摘Using the complex variable function method and the technique of conformal mapping, the anti-plane shear problem of an elliptic hole with asymmetric colfinear cracks in a one-dimensional hexagonal quasi-crystal is solved, and the exact analytic solutions of the stress intensity factors （SIFs） for mode Ⅲ problem are obtained. Under the limiting conditions, the present results reduce to the Griffith crack and many new results obtained as well, such as the circular hole with asymmetric collinear cracks, the elliptic hole with a straight crack, the mode T crack, the cross crack and so on. As far as the phonon field is concerned, these results, which play an important role in many practical and theoretical applications, are shown to be in good agreement with the classical results.
