The {0001} face develops on the habit of self-frequency doubling laser crystal Yb: YAI3(B03)4 (YbYAB) only under high growth rate condition, and its morphology is rough. To study the growth mechanism of {0001} face, w...The {0001} face develops on the habit of self-frequency doubling laser crystal Yb: YAI3(B03)4 (YbYAB) only under high growth rate condition, and its morphology is rough. To study the growth mechanism of {0001} face, we have observed the growth morphology on {0001} polishing section by atomic force microscopy (AFM). A series of AFM images captured in different growth durations on the {0001} polishing section reflect the crystal growth process. It is shown that the growth morphology on the {0001} polishing section was rough with many hillocks at the first growth stage, and it can become smooth finally, although the growth morphology on the {0001} face developed naturally on YbYAB crystal habit is always rough. On the smooth {0001} surface formed at the last growth stage, there are some triangular pits. This fact is different from that of hillocks in most crystal growth morphologies. AFM can easily distinguish the pits or hillocks on the surface, but differential interfere contrast microscopy (DIC) can not do. The orientation of the triangular pits is just the opposite to the triangular {0001} faces. The chemical etching pattern is also composed of this kind of triangular pits. These growth morphology and etching pattern of the {0001} faces show 3m symmetry, but the point group of YbYAB crystal is 32. The symmetric contradiction between morphology and point group does not exist for quartz, although which has the same point group as YbYAB. From quartz {0001} surface morphology we can distinguish the right form or left form of the crystal, but from YbYAB {0001} surface morphology we can not do. The reason for the symmetric contradiction between YbYAB {0001} surface morphology and its point group is not known yet.展开更多
In the plasma etching process,the edge roughness and mask pattern usually play a significant role in the deformation of holes under the influence of the charging effect.The competitive effect between these two factors...In the plasma etching process,the edge roughness and mask pattern usually play a significant role in the deformation of holes under the influence of the charging effect.The competitive effect between these two factors has been investigated,focusing on the surface charging in a hexagonal array,with various values of roughness parameters(amplitude(A)and wavelength(W))and distances between holes(L).A series of classical particle dynamic simulations of surface charging,surface etching and profile evolution were used to investigate the effect of roughness and pattern on charging.This study showed that various roughness and patterns(represented by different values of L)can significantly influence surface distributions of the electric-field(Efield)and the etching rates on the mask surface.The simulations also showed that(1)the shape of the pattern array influences the mask hole profile during the etching process,i.e.a hexagonal array pattern tends to deform the profile of a circular mask hole into a hexagonal hole;(2)pattern roughness is aggravated during the etching process.These factors were found to be significant only at a small feature pitch and may be ignored at a large feature pitch.Possible mechanisms of these results during the etching process are discussed.This work sheds light on the ways to maintain pattern integrity and further improve the quality of the pattern transfer onto the substrate.展开更多
基金The work was supported by the National Natural Science Foundation of China (grant No. 69890235 and 59823003).
文摘The {0001} face develops on the habit of self-frequency doubling laser crystal Yb: YAI3(B03)4 (YbYAB) only under high growth rate condition, and its morphology is rough. To study the growth mechanism of {0001} face, we have observed the growth morphology on {0001} polishing section by atomic force microscopy (AFM). A series of AFM images captured in different growth durations on the {0001} polishing section reflect the crystal growth process. It is shown that the growth morphology on the {0001} polishing section was rough with many hillocks at the first growth stage, and it can become smooth finally, although the growth morphology on the {0001} face developed naturally on YbYAB crystal habit is always rough. On the smooth {0001} surface formed at the last growth stage, there are some triangular pits. This fact is different from that of hillocks in most crystal growth morphologies. AFM can easily distinguish the pits or hillocks on the surface, but differential interfere contrast microscopy (DIC) can not do. The orientation of the triangular pits is just the opposite to the triangular {0001} faces. The chemical etching pattern is also composed of this kind of triangular pits. These growth morphology and etching pattern of the {0001} faces show 3m symmetry, but the point group of YbYAB crystal is 32. The symmetric contradiction between morphology and point group does not exist for quartz, although which has the same point group as YbYAB. From quartz {0001} surface morphology we can distinguish the right form or left form of the crystal, but from YbYAB {0001} surface morphology we can not do. The reason for the symmetric contradiction between YbYAB {0001} surface morphology and its point group is not known yet.
基金supported by Youth Project of Science and Technology Research Program of Chongqing Education Commission of China(No.KJQN201901407)the start-up research funding of Yangtze Normal University,China(No.2017KYQD113)2017 Youth Research Talent Supporting Program,China(No.2017QNRC18)。
文摘In the plasma etching process,the edge roughness and mask pattern usually play a significant role in the deformation of holes under the influence of the charging effect.The competitive effect between these two factors has been investigated,focusing on the surface charging in a hexagonal array,with various values of roughness parameters(amplitude(A)and wavelength(W))and distances between holes(L).A series of classical particle dynamic simulations of surface charging,surface etching and profile evolution were used to investigate the effect of roughness and pattern on charging.This study showed that various roughness and patterns(represented by different values of L)can significantly influence surface distributions of the electric-field(Efield)and the etching rates on the mask surface.The simulations also showed that(1)the shape of the pattern array influences the mask hole profile during the etching process,i.e.a hexagonal array pattern tends to deform the profile of a circular mask hole into a hexagonal hole;(2)pattern roughness is aggravated during the etching process.These factors were found to be significant only at a small feature pitch and may be ignored at a large feature pitch.Possible mechanisms of these results during the etching process are discussed.This work sheds light on the ways to maintain pattern integrity and further improve the quality of the pattern transfer onto the substrate.
