A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysi...A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.展开更多
摄像头模组主要由镜头、滤色片、音圈马达、马达驱动、图像传感器等部件构成。图像传感器和音圈马达驱动都是CMOS半导体器件,对ESD(Electro-Static Discharge)非常敏感。本文的主要内容包括以下几个方面:(1)摄像头模组的ESD保护设计,主...摄像头模组主要由镜头、滤色片、音圈马达、马达驱动、图像传感器等部件构成。图像传感器和音圈马达驱动都是CMOS半导体器件,对ESD(Electro-Static Discharge)非常敏感。本文的主要内容包括以下几个方面:(1)摄像头模组的ESD保护设计,主要从结构设计和电子设计两个方面来阐述,结构设计时主要对ESD敏感区的保护;电子设计时主要是对CMOS芯片的接口引脚进行保护。(2)人体模型的研究,主要讨论HBM(Human Body Model)的仿真模型的创建。(3)静电释放的波形仿真和实验,主要讨论测试环境的建立,并对比目标和实际波形。展开更多
By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of ...By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of single event latch-up （SEL） and transient-induced latch-up （TLU） are studied, respectively, for a 12-bit complementary metal--oxide semiconductor （CMOS） analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between ＂high current＂ induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the ＂high current＂ induced by SEL and for that by TLU, However, for SEL, the minority carder diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node （the ground node） is the cause of the minority carrier diffusion for TLU.展开更多
文摘A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
文摘摄像头模组主要由镜头、滤色片、音圈马达、马达驱动、图像传感器等部件构成。图像传感器和音圈马达驱动都是CMOS半导体器件,对ESD(Electro-Static Discharge)非常敏感。本文的主要内容包括以下几个方面:(1)摄像头模组的ESD保护设计,主要从结构设计和电子设计两个方面来阐述,结构设计时主要对ESD敏感区的保护;电子设计时主要是对CMOS芯片的接口引脚进行保护。(2)人体模型的研究,主要讨论HBM(Human Body Model)的仿真模型的创建。(3)静电释放的波形仿真和实验,主要讨论测试环境的建立,并对比目标和实际波形。
基金Project supported by the National Natural Science Foundation of China(Grant No.41304148)
文摘By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of single event latch-up （SEL） and transient-induced latch-up （TLU） are studied, respectively, for a 12-bit complementary metal--oxide semiconductor （CMOS） analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between ＂high current＂ induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the ＂high current＂ induced by SEL and for that by TLU, However, for SEL, the minority carder diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node （the ground node） is the cause of the minority carrier diffusion for TLU.
