A diode-end-pumped electro-optic （EO） Q-switched Nd：YVO4 laser operating at repetition rate of 10 kpps （pulses per second） was reported. A block of La3Ga5SiO14 （LGS） single crystal was used as a Q-switch and th...A diode-end-pumped electro-optic （EO） Q-switched Nd：YVO4 laser operating at repetition rate of 10 kpps （pulses per second） was reported. A block of La3Ga5SiO14 （LGS） single crystal was used as a Q-switch and the driver was a metal oxide semiconductor field effect transistor （MOS-FET） pulser of high repetition rate and high voltage. At continuous wave （CW） operation, the slope efficiency of the laser was 46%, and maximum optical-to-optical efficiency was 38.5%. Using an output coupler with transmission of 70%, a 10-kpps Q-switched pulse train with 0.4-mJ monopulse energy and 8.2-ns pulse width was achieved, the optical conversion efficiency was around 15%, and the beam quality M^2 factor was less than 1.2.展开更多
Through the reversible isomerization of trans-cis-trans under the linear polarization light, the molecules of azo materials have the same tropism which is vertical to the polarization of light. This means that azo mat...Through the reversible isomerization of trans-cis-trans under the linear polarization light, the molecules of azo materials have the same tropism which is vertical to the polarization of light. This means that azo materials have photo-induced birefringence which is related to optical power and polarization angle of the light. Based on the photo-induced birefringence of azo materials, we design a new type of optically pumped semiconductor vertical external cavity surface emitting laser （OPS-VECSEL） which can control the polarization and frequency of the ejection laser. The functional molecules of azo materials are [3-azo- （4＇nitro）]- （9-ethyl）-carbazole （ANECz）.展开更多
文摘A diode-end-pumped electro-optic （EO） Q-switched Nd：YVO4 laser operating at repetition rate of 10 kpps （pulses per second） was reported. A block of La3Ga5SiO14 （LGS） single crystal was used as a Q-switch and the driver was a metal oxide semiconductor field effect transistor （MOS-FET） pulser of high repetition rate and high voltage. At continuous wave （CW） operation, the slope efficiency of the laser was 46%, and maximum optical-to-optical efficiency was 38.5%. Using an output coupler with transmission of 70%, a 10-kpps Q-switched pulse train with 0.4-mJ monopulse energy and 8.2-ns pulse width was achieved, the optical conversion efficiency was around 15%, and the beam quality M^2 factor was less than 1.2.
文摘Through the reversible isomerization of trans-cis-trans under the linear polarization light, the molecules of azo materials have the same tropism which is vertical to the polarization of light. This means that azo materials have photo-induced birefringence which is related to optical power and polarization angle of the light. Based on the photo-induced birefringence of azo materials, we design a new type of optically pumped semiconductor vertical external cavity surface emitting laser （OPS-VECSEL） which can control the polarization and frequency of the ejection laser. The functional molecules of azo materials are [3-azo- （4＇nitro）]- （9-ethyl）-carbazole （ANECz）.
