A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumpe...A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.展开更多
研制了一种基于肖特基变容二极管的0.17 THz二倍频器,该器件为0.34 THz无线通信系统收发前端提供了低相噪、低杂散的本振信号。倍频器结构基于波导腔体石英基片微带电路实现,其核心器件是多结正向并联的肖特基变容二极管。文中采用结参...研制了一种基于肖特基变容二极管的0.17 THz二倍频器,该器件为0.34 THz无线通信系统收发前端提供了低相噪、低杂散的本振信号。倍频器结构基于波导腔体石英基片微带电路实现,其核心器件是多结正向并联的肖特基变容二极管。文中采用结参数模型和三维电磁模型相结合的方式对二极管进行建模,通过两种电路匹配方式实现了0.17 THz二倍频器的最优化设计,最终完成器件的加工及测试。测试结果表明,在输入80~86 GHz,20 d Bm的驱动信号下,倍频器的最大输出功率达12.21 m W,倍频效率11%,输出频点为163 GHz;当前端输入功率达到饱和状态时,该频点输出功率可达21.41 m W。展开更多
A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in thi...A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.展开更多
This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doubl...This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-μm CMOS technology and operates with a 2.7 to 3.6 V supply voltage. It has an area of 0.4 mm^2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.展开更多
The nanohardness is from 1.44 to 2.61 GPa,the Vickers hardness is from 127 to 252 Vickers,and elastic modulus is from 52 to 123 GPa by the nanoindentation experiments on the doubler plane of KDP crystal. An indentatio...The nanohardness is from 1.44 to 2.61 GPa,the Vickers hardness is from 127 to 252 Vickers,and elastic modulus is from 52 to 123 GPa by the nanoindentation experiments on the doubler plane of KDP crystal. An indentation size effect is observed on the doubler plane in the test as the nanohardness and elastic modulus decreases with the increase of the maximum load.Slippage is identified as the major mode of plastic deformation, and pop-in events are attributed to the initiation of slippage.And the variation of unloading curve end is the result of stick effects between the indenter and the contact surface.The depth of the elastic deformation,which is between 40 and 75 nm,is responsible for the elastic deformation.The doubler plane of KDP crystal has anisotropy,and the relative anisotropy of nanohardness is 8.2%and the relative anisotropy of elastic modulus is 8.0%.展开更多
A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with ...A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.展开更多
We report on the generation of self-oscillations from a continuously pumped singly resonant frequency doubler based on a periodically poled potassium titanyl phosphate crystal （PPKTP）. The sustained square-wave and ...We report on the generation of self-oscillations from a continuously pumped singly resonant frequency doubler based on a periodically poled potassium titanyl phosphate crystal （PPKTP）. The sustained square-wave and staircase curve of self-oscillations are obtained when the incident pump powers are below and above the threshold of subharmonic-pumped parametric oscillation （SPO）, respectively. The self-oscillations can be explained by the competition between the phase shifts induced by cascading nonlinearity and thermal effect, and the influence of fundamental nonlinear phase shift by the generation of SPO. The simulation results are in good agreement with the experiment data.展开更多
This paper presents a high-efficiency charge pump circuit composed of cascaded cross-coupled voltage doublers implemented in an isolated bipolar-CMOS-DMOS（BCD） technology for implantable medical devices.Taking advan...This paper presents a high-efficiency charge pump circuit composed of cascaded cross-coupled voltage doublers implemented in an isolated bipolar-CMOS-DMOS（BCD） technology for implantable medical devices.Taking advantage of the transistor structures in the isolated BCD process, the leakage currents caused by the parasitic PNP transistors in the cross-coupled PMOS serial switches are eliminated by simply connecting the inside substrate terminal to the isolation terminal of each PMOS transistor. The simple circuit structure leads to small parasitic capacitance in the voltage doubler, which in turn ensures high efficiency of the overall charge pump. The proposed charge pump with 5 cascaded voltage doublers is fabricated in a 0.35-μm isolated BCD process. Measurement results with 2-V power supply, 1-MHz driving clock frequency and 40-μA current load show that an efficiency of 72.6% is achieved, and the output voltage can be pumped to about 11.5 V at zero load current. The chip area of the charge pump is 1.6 × 0.35 mm^2.展开更多
A frequency generation module for 60-GHz transceivers and phased array systems is presented in this paper. It is composed of a divide-by-2 current mode logic divider （CML） and a doubler in push-push configuration. B...A frequency generation module for 60-GHz transceivers and phased array systems is presented in this paper. It is composed of a divide-by-2 current mode logic divider （CML） and a doubler in push-push configuration. Benefiting from the CML structure and push-push configuration, the proposed frequency generation module has a wide operating frequency range to cover process, voltage, and temperature variation. It is implemented in a 90-nm CMOS process, and occupies a chip area of 0.64 × 0.65 mm^2 including pads. The measurement results show that the designed frequency generation module functions properly with input frequency over 15 GHz to 25 GHz. The whole chip dissipates 12.1 mW from a 1.2-V supply excluding the output buffers.展开更多
The multiphase boost DC-DC converter with stable control strategy is presented. Multi- phase boost DC-DC converter is designed for high voltage and high power applications, and could be achieved by the adjustment of v...The multiphase boost DC-DC converter with stable control strategy is presented. Multi- phase boost DC-DC converter is designed for high voltage and high power applications, and could be achieved by the adjustment of voltage doubler rectifiers on the secondary side of high frequency transformers. The stable control strategy for three phase boost DC-DC converter has been utilized during simulation in this study and this strategy can be extend to N-number of phases. The stable control strategy consists of only three voltage loops, which are sufficient for appropriate and efficient operation of three phase boost DC-DC converter. With the stable control strategy, the equal power balance sharing can be obtained between input and output. The stability of control strategy has been evaluated by simulating the multiphase boost DC-DC converter for the same and mismatch turn ratios of high frequency transformers. The simulation result is good and the objective of the strategy is a- chieved.展开更多
W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the no...W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.展开更多
This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a s...This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, Vss = -3.5 V, Id = 200 mA and the chip size is 1.5× 1.8 mm^2.展开更多
The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high...The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode （PSVD） is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39,6 GHz LH NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.展开更多
A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A...A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.展开更多
基金Supported by the 12th Five-year Defense Pre-research Fund of China(No.51308030509)
文摘A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.
文摘研制了一种基于肖特基变容二极管的0.17 THz二倍频器,该器件为0.34 THz无线通信系统收发前端提供了低相噪、低杂散的本振信号。倍频器结构基于波导腔体石英基片微带电路实现,其核心器件是多结正向并联的肖特基变容二极管。文中采用结参数模型和三维电磁模型相结合的方式对二极管进行建模,通过两种电路匹配方式实现了0.17 THz二倍频器的最优化设计,最终完成器件的加工及测试。测试结果表明,在输入80~86 GHz,20 d Bm的驱动信号下,倍频器的最大输出功率达12.21 m W,倍频效率11%,输出频点为163 GHz;当前端输入功率达到饱和状态时,该频点输出功率可达21.41 m W。
基金Project supported by the National Natural Science Foundation of China (Grant No.61871072)。
文摘A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.
文摘This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-μm CMOS technology and operates with a 2.7 to 3.6 V supply voltage. It has an area of 0.4 mm^2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.
基金supported by the National Natural Science Foundation of China(No.51135002)the Natural Science Foundation of Liaoning Province of China(No.20102027)the Open Foundation of State Key Laboratory of Tribology of Tsinghua University(No. SKLTKF09B03)
文摘The nanohardness is from 1.44 to 2.61 GPa,the Vickers hardness is from 127 to 252 Vickers,and elastic modulus is from 52 to 123 GPa by the nanoindentation experiments on the doubler plane of KDP crystal. An indentation size effect is observed on the doubler plane in the test as the nanohardness and elastic modulus decreases with the increase of the maximum load.Slippage is identified as the major mode of plastic deformation, and pop-in events are attributed to the initiation of slippage.And the variation of unloading curve end is the result of stick effects between the indenter and the contact surface.The depth of the elastic deformation,which is between 40 and 75 nm,is responsible for the elastic deformation.The doubler plane of KDP crystal has anisotropy,and the relative anisotropy of nanohardness is 8.2%and the relative anisotropy of elastic modulus is 8.0%.
基金supported by the National Basic Research Program of China(No.2010CB327502)
文摘A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.
基金supported by the National Basic Research Program of China (Grant No. 2010CB923101)the National Natural Science Foundation of China (Grant Nos. 61227015 and 61121064)
文摘We report on the generation of self-oscillations from a continuously pumped singly resonant frequency doubler based on a periodically poled potassium titanyl phosphate crystal （PPKTP）. The sustained square-wave and staircase curve of self-oscillations are obtained when the incident pump powers are below and above the threshold of subharmonic-pumped parametric oscillation （SPO）, respectively. The self-oscillations can be explained by the competition between the phase shifts induced by cascading nonlinearity and thermal effect, and the influence of fundamental nonlinear phase shift by the generation of SPO. The simulation results are in good agreement with the experiment data.
基金Project supported by the National Natural Science Foundation of China(No.61474092)
文摘This paper presents a high-efficiency charge pump circuit composed of cascaded cross-coupled voltage doublers implemented in an isolated bipolar-CMOS-DMOS（BCD） technology for implantable medical devices.Taking advantage of the transistor structures in the isolated BCD process, the leakage currents caused by the parasitic PNP transistors in the cross-coupled PMOS serial switches are eliminated by simply connecting the inside substrate terminal to the isolation terminal of each PMOS transistor. The simple circuit structure leads to small parasitic capacitance in the voltage doubler, which in turn ensures high efficiency of the overall charge pump. The proposed charge pump with 5 cascaded voltage doublers is fabricated in a 0.35-μm isolated BCD process. Measurement results with 2-V power supply, 1-MHz driving clock frequency and 40-μA current load show that an efficiency of 72.6% is achieved, and the output voltage can be pumped to about 11.5 V at zero load current. The chip area of the charge pump is 1.6 × 0.35 mm^2.
基金Project supported by the State Key Development Program for Basic Research of China(No.2010CB327404)the National Natural Science and Technology Program of China(No.2011AA010202)+1 种基金the National Natural Science Foundation of China(No.61101001)the Tsinghua National Laboratory for Information Science and Technology(TNList) Cross-Discipline Foundation
文摘A frequency generation module for 60-GHz transceivers and phased array systems is presented in this paper. It is composed of a divide-by-2 current mode logic divider （CML） and a doubler in push-push configuration. Benefiting from the CML structure and push-push configuration, the proposed frequency generation module has a wide operating frequency range to cover process, voltage, and temperature variation. It is implemented in a 90-nm CMOS process, and occupies a chip area of 0.64 × 0.65 mm^2 including pads. The measurement results show that the designed frequency generation module functions properly with input frequency over 15 GHz to 25 GHz. The whole chip dissipates 12.1 mW from a 1.2-V supply excluding the output buffers.
文摘The multiphase boost DC-DC converter with stable control strategy is presented. Multi- phase boost DC-DC converter is designed for high voltage and high power applications, and could be achieved by the adjustment of voltage doubler rectifiers on the secondary side of high frequency transformers. The stable control strategy for three phase boost DC-DC converter has been utilized during simulation in this study and this strategy can be extend to N-number of phases. The stable control strategy consists of only three voltage loops, which are sufficient for appropriate and efficient operation of three phase boost DC-DC converter. With the stable control strategy, the equal power balance sharing can be obtained between input and output. The stability of control strategy has been evaluated by simulating the multiphase boost DC-DC converter for the same and mismatch turn ratios of high frequency transformers. The simulation result is good and the objective of the strategy is a- chieved.
文摘W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.
文摘This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, Vss = -3.5 V, Id = 200 mA and the chip size is 1.5× 1.8 mm^2.
基金Project supported by the National Scientific Major Projects of China (Grant No. 2011ZX03004-001-02)the National Natural Science Foundation of China (Grant No. 60806024)
文摘The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode （PSVD） is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39,6 GHz LH NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.
基金Project supported by the National Natural Science Foundation of China(No.60806024)the International Collaboration Program of the Ministry of Science and Technology(No.2009DFA12130)
文摘A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.
