This study reports a new weakly alkaline slurry for copper chemical mechanical planarization （CMP）, it can achieve a high planarization efficiency at a reduced down pressure of 1.0 psi. The slurry is studied through...This study reports a new weakly alkaline slurry for copper chemical mechanical planarization （CMP）, it can achieve a high planarization efficiency at a reduced down pressure of 1.0 psi. The slurry is studied through the polish rate, planarization, copper surface roughness and stability. The copper polishing experiment result shows that the polish rate can reach 10032 A/rain. From the multi-layers copper CMP test, a good result is obtained, that is a big step height （10870 A） that can be eliminated in just 35 s, and the copper root mean square surface roughness （sq） is very low （〈 1 rim）. Apart from this, compared with the alkaline slurry researched before, it has a good progress on stability of copper polishing rate, stable for 12 h at least. All the results presented here are relevant for further developments in the area of copper CMP.展开更多
For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respecti...For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respectively.Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity（WIWNU） and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.展开更多
基金Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308)the Hebei Natural Science Foundation of China(No.F2012202094)
文摘This study reports a new weakly alkaline slurry for copper chemical mechanical planarization （CMP）, it can achieve a high planarization efficiency at a reduced down pressure of 1.0 psi. The slurry is studied through the polish rate, planarization, copper surface roughness and stability. The copper polishing experiment result shows that the polish rate can reach 10032 A/rain. From the multi-layers copper CMP test, a good result is obtained, that is a big step height （10870 A） that can be eliminated in just 35 s, and the copper root mean square surface roughness （sq） is very low （〈 1 rim）. Apart from this, compared with the alkaline slurry researched before, it has a good progress on stability of copper polishing rate, stable for 12 h at least. All the results presented here are relevant for further developments in the area of copper CMP.
基金Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308)the Hebei Natural Science Foundation of China(No.E2013202247)the Natural Science Foundation of Hebei Province,China(No.E2014202147)
文摘For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respectively.Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity（WIWNU） and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.
