A Monte Carlo algorithm has been developed by the authors to simulate the chemical vapor deposition (CVD) processes of diamond films. The method considers both the diffusion and the incorporation of the growth radical...A Monte Carlo algorithm has been developed by the authors to simulate the chemical vapor deposition (CVD) processes of diamond films. The method considers both the diffusion and the incorporation of the growth radicals on the growing surface in simulating the evolution of the morphology and microstructure. The calculation of configuration energy is used to determine the orientation of adsorbed growth radicals. The effect of processing variables such as nucleation density and substrate temperature on the morphology and microstructure is discussed. It is found that competitive characteristic and coarsening effect exist in the simulation results, which agree with the experimental observations.展开更多
The optical emission spectra （atomic hydrogen （Hα, Hβ, Hγ）, atomic carbon C （2p3s → 2p^2： A = 165.7 nm） and radical CH （A^2△ →X^2П：λ = 420 - 440 nm）） in the gas phase process of the diamond film grow...The optical emission spectra （atomic hydrogen （Hα, Hβ, Hγ）, atomic carbon C （2p3s → 2p^2： A = 165.7 nm） and radical CH （A^2△ →X^2П：λ = 420 - 440 nm）） in the gas phase process of the diamond film growth from a gas mixture of CH4 and H2 by the technology of electron-assisted chemical vapor deposition （EACVD） have been investigated by using Monte Carlo simulation. The results show that the growth rate may be enhanced by the substrate bias due to the increase of atomic hydrogen concentration and the mean temperature of electrons. And a method of determining the mean temperature of electrons in the plasma in-situ is given. The strong dependence on substrate temperature of the quality of diamond film mainly attributes to the change of zas ohase orocess near the substrate surface.展开更多
文摘A Monte Carlo algorithm has been developed by the authors to simulate the chemical vapor deposition (CVD) processes of diamond films. The method considers both the diffusion and the incorporation of the growth radicals on the growing surface in simulating the evolution of the morphology and microstructure. The calculation of configuration energy is used to determine the orientation of adsorbed growth radicals. The effect of processing variables such as nucleation density and substrate temperature on the morphology and microstructure is discussed. It is found that competitive characteristic and coarsening effect exist in the simulation results, which agree with the experimental observations.
基金the National Natural Science Foundation of China(No.10647123)the Youth Natural Science Foundation of Hebei University(No.2005Q31)
文摘The optical emission spectra （atomic hydrogen （Hα, Hβ, Hγ）, atomic carbon C （2p3s → 2p^2： A = 165.7 nm） and radical CH （A^2△ →X^2П：λ = 420 - 440 nm）） in the gas phase process of the diamond film growth from a gas mixture of CH4 and H2 by the technology of electron-assisted chemical vapor deposition （EACVD） have been investigated by using Monte Carlo simulation. The results show that the growth rate may be enhanced by the substrate bias due to the increase of atomic hydrogen concentration and the mean temperature of electrons. And a method of determining the mean temperature of electrons in the plasma in-situ is given. The strong dependence on substrate temperature of the quality of diamond film mainly attributes to the change of zas ohase orocess near the substrate surface.
