We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction ...We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.展开更多
A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of ...A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.展开更多
This study focuses on the transient liquid phase(TLP)bonding of DD5 single-crystal superalloy to Cr Co Nibased medium-entropy alloy(MEA)using a BNi-2 filler alloy.The microstructure and mechanical properties of the TL...This study focuses on the transient liquid phase(TLP)bonding of DD5 single-crystal superalloy to Cr Co Nibased medium-entropy alloy(MEA)using a BNi-2 filler alloy.The microstructure and mechanical properties of the TLP-bonded DD5/MEA joint were evaluated,and the microstructural evolution mechanism was investigated.The formation of the isothermal solidification zone(ISZ)depended on the diffusion of the melting-point depressants(Si and B elements)from the liquid filler into the DD5 and MEA substrates,as well as the dissolution of the substrates.Boron diffused along theγchannel of DD5 and reacted to form M_(5)B_(3)boride,herein referred to as the diffusion-affected zone(DAZ I).Similarly,the Cr_(5)B_(3)boride precipitated in the Ni-rich MEA matrix adjacent to the MEA substrate(i.e.,DAZ II).Additionally,a coherent orientation of[0]_(BCY)//[011]_(FCC)and(002)_(BCY)//(200)_(FCC)was detected between M_(5)B_(3)boride with a body-centered tetragonal(BCT)structure and the face-centered cubic(FCC)matrix.The performance of the joint was dominated by the properties of the bonding seam.As the bonding time increased from 20to 80 min,the athermal solidification zone(including eutectic microstructure)was gradually replaced by the ISZ exhibiting excellent plastic deformation capability,and the shear strength of the joint was improved.The maximum shear strength(752 MPa)was achieved when the eutectic-free joint was bonded at 1050℃ for 80 min.The fracture morphology revealed a mixture mode,indicating the initiation of cracks in the DAZ II,mainly propagating in the ISZ,and passing through the DAZ I.展开更多
A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the th...A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.展开更多
基金supported by the Natural Science Foundation of China, the Principal’s Fund of Peking University (Grant No. 60676032)the National Found for Fostering Talents of Basic Science (Grant No. NFFTBSJ0630311)
文摘We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.
文摘A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
基金supported by the fund of Natural Science Basic Research Program of Shaanxi(Grant No.2020JQ-190)National Natural Science Foundations of China(Grant Nos.51975480,52075449,and U1737205)China Postdoctoral Science Foundation funded project(Grant Nos.2019TQ0263,and 2020M683560)。
文摘This study focuses on the transient liquid phase(TLP)bonding of DD5 single-crystal superalloy to Cr Co Nibased medium-entropy alloy(MEA)using a BNi-2 filler alloy.The microstructure and mechanical properties of the TLP-bonded DD5/MEA joint were evaluated,and the microstructural evolution mechanism was investigated.The formation of the isothermal solidification zone(ISZ)depended on the diffusion of the melting-point depressants(Si and B elements)from the liquid filler into the DD5 and MEA substrates,as well as the dissolution of the substrates.Boron diffused along theγchannel of DD5 and reacted to form M_(5)B_(3)boride,herein referred to as the diffusion-affected zone(DAZ I).Similarly,the Cr_(5)B_(3)boride precipitated in the Ni-rich MEA matrix adjacent to the MEA substrate(i.e.,DAZ II).Additionally,a coherent orientation of[0]_(BCY)//[011]_(FCC)and(002)_(BCY)//(200)_(FCC)was detected between M_(5)B_(3)boride with a body-centered tetragonal(BCT)structure and the face-centered cubic(FCC)matrix.The performance of the joint was dominated by the properties of the bonding seam.As the bonding time increased from 20to 80 min,the athermal solidification zone(including eutectic microstructure)was gradually replaced by the ISZ exhibiting excellent plastic deformation capability,and the shear strength of the joint was improved.The maximum shear strength(752 MPa)was achieved when the eutectic-free joint was bonded at 1050℃ for 80 min.The fracture morphology revealed a mixture mode,indicating the initiation of cracks in the DAZ II,mainly propagating in the ISZ,and passing through the DAZ I.
基金supported by the Guangdong Innovative Research Team Program(No.2009010044)the China Postdoctoral Science Foundation(No.2014M562233)+1 种基金the National Natural Science Foundation of Guangdong,China(No.2015A030312011)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(No.IOSKL2014KF17)
文摘A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.
