A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer(SAM)to silicon micro/nano-textured surfaces is presented in this paper.The micro/nano-textured surfaces on silicon substrates w...A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer(SAM)to silicon micro/nano-textured surfaces is presented in this paper.The micro/nano-textured surfaces on silicon substrates were generated by the aluminum-induced crystallization(AIC)of amorphous silicon(a-Si)technique.Octadecyltrichlorosilane(OTS)SAMs were then applied to the textured surfaces by dip coating.The topography and wetting properties of the resulting surfaces were characterized using scanning electron microscopy(SEM)and a video-based contact angle measurement system.The results show that by introducing OTS SAMs on the silicon micro/nano-textured surfaces,superhydrophobic surfaces with water contact angles(WCAs)of 155°were obtained,as compared to the WCAs of OTS-modified smooth silicon surfaces of about 112°.Surface topography was found to directly influence the WCA as predicted by the Cassie-Baxter model.展开更多
应用晶化非晶硅(a-Si)薄膜铝诱导方法,采用X射线衍射(X-ray diffraction,XRD)、光学显微镜(Optical Microscopy,OM)和原子力显微镜(Atomic Force Microscopy,AFM)等测试手段,研究了退火条件对样品晶化的影响.结果表明,样品在300℃下退...应用晶化非晶硅(a-Si)薄膜铝诱导方法,采用X射线衍射(X-ray diffraction,XRD)、光学显微镜(Optical Microscopy,OM)和原子力显微镜(Atomic Force Microscopy,AFM)等测试手段,研究了退火条件对样品晶化的影响.结果表明,样品在300℃下退火后仍为非晶态;退火温度为400℃时,样品开始晶化.随着退火时间的增加,薄膜晶化程度越来越高,晶粒越来越大,同时薄膜表面粗糙度增加.展开更多
Amorphous silicon （ a-Si ） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （ poly- Si ） thin films were prepared by aluminum- induced crystallization （ AlC ）. The effects of an...Amorphous silicon （ a-Si ） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （ poly- Si ） thin films were prepared by aluminum- induced crystallization （ AlC ）. The effects of annealing temperature on the microstructure and morphology were investigated. The AlC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing termperature.展开更多
Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing cry...Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.展开更多
基金This material is based on work supported by the US National Science Foundation under Grant Nos.CMMI-0600642 and CMMI-0645040.
文摘A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer(SAM)to silicon micro/nano-textured surfaces is presented in this paper.The micro/nano-textured surfaces on silicon substrates were generated by the aluminum-induced crystallization(AIC)of amorphous silicon(a-Si)technique.Octadecyltrichlorosilane(OTS)SAMs were then applied to the textured surfaces by dip coating.The topography and wetting properties of the resulting surfaces were characterized using scanning electron microscopy(SEM)and a video-based contact angle measurement system.The results show that by introducing OTS SAMs on the silicon micro/nano-textured surfaces,superhydrophobic surfaces with water contact angles(WCAs)of 155°were obtained,as compared to the WCAs of OTS-modified smooth silicon surfaces of about 112°.Surface topography was found to directly influence the WCA as predicted by the Cassie-Baxter model.
文摘应用晶化非晶硅(a-Si)薄膜铝诱导方法,采用X射线衍射(X-ray diffraction,XRD)、光学显微镜(Optical Microscopy,OM)和原子力显微镜(Atomic Force Microscopy,AFM)等测试手段,研究了退火条件对样品晶化的影响.结果表明,样品在300℃下退火后仍为非晶态;退火温度为400℃时,样品开始晶化.随着退火时间的增加,薄膜晶化程度越来越高,晶粒越来越大,同时薄膜表面粗糙度增加.
文摘Amorphous silicon （ a-Si ） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （ poly- Si ） thin films were prepared by aluminum- induced crystallization （ AlC ）. The effects of annealing temperature on the microstructure and morphology were investigated. The AlC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing termperature.
基金Supported by the National Natural Science Foundation of China under Grant No 10175030, and the Natural Science Foundation of Gansu Province under Grant No 4WS035-A72-134.
文摘Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
