摘要
利用PECVD设备在普通玻璃基片上沉积a-Si薄膜,采用铝诱导晶化法(AIC)在氮气气氛下进行快速退火处理制备出poly-Si薄膜。研究了不同的热处理条件对a-Si薄膜微观结构、表面形貌的影响,通过XRD、Raman、SEM等测试手段对薄膜的结构、形貌进行表征。结果表明:铝膜的厚度为1μm时,在450℃下退火10 min,薄膜样品开始向poly-Si薄膜转变,并且随着退火温度的升高和退火时间的增加,晶化程度加强。
silicon （a-Si） thin films were deposited on glass substratc by PECVD;polycrystalline silicon （poly-Si） thin films were prepared by aluminum induced crystallization （AIC） with annealed under nitrogen atmosphere. The effect of different annealed conditions on the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. The results indicated that a-Si thin films transfer into poly-Si when the a Si film was annealed at Ta = 450℃ and annealing time ta = 10 rain for aluminum film with thickness of 1μm. The crystallinity of a-Si thin films was enhanced obviously with increment of annealing temperature and annealing time.
出处
《武汉理工大学学报》
EI
CAS
CSCD
北大核心
2006年第5期8-10,共3页
Journal of Wuhan University of Technology
基金
武汉理工大学校基金(2005XJJ054)
关键词
铝诱导晶化
多晶硅薄膜
非晶硅薄膜
aluminum-induced crystallization
amorphous silicon thin films
polycrystalline silicon thin films
