Fluorinated amorphous hydrogenated a-C∶F∶H carbon thin films were deposited using radio frequency plasma enhanced chemical vapor deposition（RF-PECVD） reactor with CF4 and CH4 as source gases and were annealed in a...Fluorinated amorphous hydrogenated a-C∶F∶H carbon thin films were deposited using radio frequency plasma enhanced chemical vapor deposition（RF-PECVD） reactor with CF4 and CH4 as source gases and were annealed in a N2 atmosphere. The properties of these films were evaluated by FTIR spectrometry, UV-VIS spectrophotometry and single-wavelength spectroscopic ellipsometry. A correspondence relativity connection between the deposition rate and technology was found. The chemical bonding structures and the content of CHx and CFx in the films are transformed and the optical band gap decreases monotonically with increasing temperature after annealing. The dielectric constant is increased with decreasing content of F in the films and the optical band gap is decreased with decreasing the content of H in the film.展开更多
文摘Fluorinated amorphous hydrogenated a-C∶F∶H carbon thin films were deposited using radio frequency plasma enhanced chemical vapor deposition（RF-PECVD） reactor with CF4 and CH4 as source gases and were annealed in a N2 atmosphere. The properties of these films were evaluated by FTIR spectrometry, UV-VIS spectrophotometry and single-wavelength spectroscopic ellipsometry. A correspondence relativity connection between the deposition rate and technology was found. The chemical bonding structures and the content of CHx and CFx in the films are transformed and the optical band gap decreases monotonically with increasing temperature after annealing. The dielectric constant is increased with decreasing content of F in the films and the optical band gap is decreased with decreasing the content of H in the film.
