摘要
使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积法,制备了a-C∶F∶H薄膜样品。采用拉曼光谱仪、傅里叶变换红外光谱仪、X射线光电子能谱仪(XPS)对薄膜的结构进行了测试和分析。研究发现:该膜呈空间网状结构,膜内碳与氟、氢的结合主要以sp3形式存在,而sp2形式的含量相对较少;在薄膜内主要含有C—Fx(x=1,2,3)、C—C、C—H2、C—H3等以及不饱和C C化学键;同时,薄膜中C—C—F键的含量比C—C—F2键的含量要高。在不同功率下沉积的薄膜,其化学键结构明显不同。
Fluorinated amorphous hydrogenated carbon （a-C ： F ： H） thin films were deposited by radio frequency plasma enhanced chemical vapor deposition （PECVD） reactor with CF4 and CH4 as source gases, at RF-power of 150 W or 200 W, and 100 ℃. The structure of the films was investigated by Raman spectroscopy, and it is found that the content of the hybrid-bonding configuration of sp^3 is more than that of sp^2. The component and chemical bands structure of the films were investigated by infrared （IR） absorption and X-ray photoelectron spectroscopy （XPS）. The results of IR and XPS analysis suggest that the chemical bonding structures in the films are mainly C-Fx（x=1, 2, 3）, C-H2, C-H3, C- C and unsaturated bonding of C=C. The relative content of C-C-F is much more than that of the C-C-F2 in these films. The chemical bonding structures change with different deposition power.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2005年第10期1589-1593,共5页
The Chinese Journal of Nonferrous Metals
基金
国家教育部博士点基金资助项目(20020533001)
关键词
a—C:F:H薄膜
等离子体增强化学气相沉积
低介电常数
化学键
a-C ： F ： H thin films
plasma enhanced chemical vapor deposition（PECVD）
low dielectric constant
chemical bands
