This review summarized the recent progress of highly efficient wide bandgap(WBG) donor polymers and their applications in non-fullerene polymer solar cells(NF-PSCs). A brief introduction of the background of WBG donor...This review summarized the recent progress of highly efficient wide bandgap(WBG) donor polymers and their applications in non-fullerene polymer solar cells(NF-PSCs). A brief introduction of the background of WBG donor polymer developments was given. Then the research progress of the reported WBG donor polymers by classification of D-type and DààA type molecular backbones was reviewed. The resulting structure-property correlations of the WBG donor polymers were also discussed to highlight the importance of chemical modifications, which have promoted the great progress of NF-PSC field. Finally,an outlook for future innovations of WBG donor polymers and their NF-PSCs was provided.展开更多
本文介绍了SiC宽禁带功率器件的特性及其在相控阵雷达中的应用情况,与Si功率器件相比,该器件在输出功率、功率密度、工作频率、工作带宽、环境适应性、抗辐射能力等方面有卓越的性能。并以SiC RF Power MESFET CRF24010在T/R组件功率放...本文介绍了SiC宽禁带功率器件的特性及其在相控阵雷达中的应用情况,与Si功率器件相比,该器件在输出功率、功率密度、工作频率、工作带宽、环境适应性、抗辐射能力等方面有卓越的性能。并以SiC RF Power MESFET CRF24010在T/R组件功率放大电路上的应用为实例,详细介绍了SiC宽禁带功率放大电路的设计过程,包括直流偏置设计、稳定性设计、谐波阻抗优化设计、输出功率与效率的仿真,并对实际电路进行测试。本文可以为有源相控阵天线的设计提供工程应用上的参考。展开更多
基金supported by the National Natural Science Foundation of China (Nos. 21825502, 51573107, 91633301 and 21432005)the Foundation of State Key Laboratory of Polymer Materials Engineering of China (No. sklpme2017-2-04)
文摘This review summarized the recent progress of highly efficient wide bandgap(WBG) donor polymers and their applications in non-fullerene polymer solar cells(NF-PSCs). A brief introduction of the background of WBG donor polymer developments was given. Then the research progress of the reported WBG donor polymers by classification of D-type and DààA type molecular backbones was reviewed. The resulting structure-property correlations of the WBG donor polymers were also discussed to highlight the importance of chemical modifications, which have promoted the great progress of NF-PSC field. Finally,an outlook for future innovations of WBG donor polymers and their NF-PSCs was provided.
文摘本文介绍了SiC宽禁带功率器件的特性及其在相控阵雷达中的应用情况,与Si功率器件相比,该器件在输出功率、功率密度、工作频率、工作带宽、环境适应性、抗辐射能力等方面有卓越的性能。并以SiC RF Power MESFET CRF24010在T/R组件功率放大电路上的应用为实例,详细介绍了SiC宽禁带功率放大电路的设计过程,包括直流偏置设计、稳定性设计、谐波阻抗优化设计、输出功率与效率的仿真,并对实际电路进行测试。本文可以为有源相控阵天线的设计提供工程应用上的参考。
文摘为分析宽禁带半导体器件GaN MOSFET与Si MOSFET栅极驱动损耗、开关损耗的成因及关联参数,利用单相全桥逆变拓扑结构搭建功率开关器件应用测试平台,对GaN MOSFET和Si MOSFET在不同开关频率及器件工作温度下的效率进行测试比较。实验结果显示,开关频率为50 k Hz和120 k Hz时,基于增强型Ga N MOSFET的逆变器比基于Si MOSFET的效率分别高1.47%和1.6%;40℃,50℃,60℃,70℃温度对比实验时,基于增强型GaN MOSFET的逆变器效率比基于Si MOSFET的分别高1.8%,1.9%,2.0%和2.1%,表明开关频率递增或工作温度越高的工况下,增强型GaN MOSFET高效性能越明显。
