Volatile organic compounds(VOC's) in air have become major concern in recent years. Biodegradation of a mixture of ethanol and methanol vapor was evaluated in a laboratory biofilter with a bed of compost and polys...Volatile organic compounds(VOC's) in air have become major concern in recent years. Biodegradation of a mixture of ethanol and methanol vapor was evaluated in a laboratory biofilter with a bed of compost and polystyrene particles using an acclimated mixed culture. The continuous performance of the biofilter was studied with different proportion of ethanol and methanol at different initial concentration and flow rates. The result showed significant removal for both ethanol and methanol, which were composition dependent. The presence of either compound in the mixture inhibited the biodegradation of the other.展开更多
Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4...Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4 simulation toolkit. The SEU cross sections and multiple cell upset(MCU) susceptibility of 3D SRAM are explored using different types and energies of heavy ions.In the simulations, the sensitivities of different dies of 3D SRAM show noticeable discrepancies for low linear energy transfers(LETs). The average percentage of MCUs of 3D SRAM increases from 17.2 to 32.95%, followed by the energy of ^(209)Bi decreasing from 71.77 to 38.28 MeV/u. For a specific LET, the percentage of MCUs presents a notable difference between the face-to-face and back-toface structures. In the back-to-face structure, the percentage of MCUs increases with a deeper die, compared with the face-to-face structure. The simulation method and process are verified by comparing the SEU cross sections of planar SRAM with experimental data. The upset cross sections of the planar process and 3D integrated SRAM are analyzed. The results demonstrate that the 3D SRAM sensitivity is not greater than that of the planar SRAM. The 3D process technology has the potential to be applied to the aerospace and military fields.展开更多
We investigate the impact of heavy ion irradiation on a hypothetical static random access memory （SRAM） device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device stru...We investigate the impact of heavy ion irradiation on a hypothetical static random access memory （SRAM） device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indis- pensable effects on multiple-bit upsets （MBUs）, and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.展开更多
Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （...Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （SEU） cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer （LET） value of 41 MeV/（mg/cm2）, which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of - 9.5 MeV/（mg/cm2）, no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset （DBU） patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects （SEE） sensitivity, especially in MBU-sensitive devices.展开更多
Abstract To improve the reliability of spaceborne electronic systems, a fault-tolerant strategy of selective triple modular redundancy （STMR） based on multi-objective optimization and evolvable hardware （EHW） agai...Abstract To improve the reliability of spaceborne electronic systems, a fault-tolerant strategy of selective triple modular redundancy （STMR） based on multi-objective optimization and evolvable hardware （EHW） against single-event upsets （SEUs） for circuits implemented on field pro- grammable gate arrays （FPGAs） based on static random access memory （SRAM） is presented in this paper. Various topologies of circuit with the same functionality are evolved using EHW firstly. Then the SEU-sensitive gates of each circuit are identified using signal probabilities of all the lines in it, and each circuit is hardened against SEUs by selectively applying triple modular redundancy （TMR） to these SEU-sensitive gates. Afterward, each circuit hardened has been evaluated by SEU Simulation, and the multi-objective optimization technology is introduced to optimize the area overhead and the number of functional errors of all the circuits, The proposed fault-tolerant strategy is tested on four circuits from microelectronics center of North Carolina （MCNC） benchmark suite. The experimental results show that it can generate innovative trade-off solutions to compromise between hardware resource consumption and system reliability. The maximum savings in the area overhead of the STMR circuit over the full TMR design is 58% with the same SEU immunity.展开更多
Upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory induced by accelerated ^（129）Xe and ^（209）Bi ions are investigated in detail. The linear energy transfer covers the range from 50 to 99.8 Me V/（mg/c...Upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory induced by accelerated ^（129）Xe and ^（209）Bi ions are investigated in detail. The linear energy transfer covers the range from 50 to 99.8 Me V/（mg/cm^2）. When the memory chips are powered off during heavy ions irradiation, single-event-latch-up and single-event-function-interruption are excluded,and only 0-〉1 upset errors in the memory array are observed. These error bit rates seem very difficult to achieve and cannot be simply recovered based on the power cycle. The number of error bits shows a strong dependence on the linear energy transfer（LET）. Under room-temperature annealing conditions, the upset errors can be reduced by about two orders of magnitude using rewrite/reprogram operations, but they subsequently increase once again in a few minutes after the power cycle. High-temperature annealing can diminish almost all error bits, which are affected by the lower LET ^（129）Xe ions. The percolation path between the floating-gate（FG） and the substrate contributes to the radiation-induced leakage current, and has been identified as the root cause of the upset errors of the Flash memory array in this work.展开更多
The instantaneous reversible soft logic upset induced by the electromagnetic interference（EMI） severely affects the performances and reliabilities of complementary metal–oxide–semiconductor（CMOS） inverters. This...The instantaneous reversible soft logic upset induced by the electromagnetic interference（EMI） severely affects the performances and reliabilities of complementary metal–oxide–semiconductor（CMOS） inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal–oxide–semiconductor field-effect transistor（MOSFET） in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.展开更多
Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi...Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.展开更多
Due to aggressive technology scaling, radiation-induced soft errors have become a serious reliability concern in VLSI chip design. This paper presents a novel radiation hardened by design latch with high single-eventu...Due to aggressive technology scaling, radiation-induced soft errors have become a serious reliability concern in VLSI chip design. This paper presents a novel radiation hardened by design latch with high single-eventupset （SEU） immunity. The proposed latch can effectively mitigate SEU by internal dual interlocked scheme. The propagation delay, power dissipation and power delay product of the presented latch are evaluated by detailed SPICE simulations. Compared with previous SEU-hardening solutions such as TMR-Latch, the presented latch is more area efficient, delay and power efficient. Fault injection simulations also demonstrate the robustness of the presented latch even under high energy particle strikes.展开更多
According to the SRAM-based FPGA's single event effect problem in space application,single event upset induced multi-block error(SEU-MBE) phenomenon and its mitigation strategy are studied in the paper.After analy...According to the SRAM-based FPGA's single event effect problem in space application,single event upset induced multi-block error(SEU-MBE) phenomenon and its mitigation strategy are studied in the paper.After analyzing the place and route result,the paper points out that the essence of SEU-MBE is that some important modules exceed the safe internal distance.Two approaches,area constraint method(ACM) and incremental route algorithm(IRA),are proposed,which can reduce the error rate by manipulating programmable switch matrix and interconnection points within FPGA route resource.Fault injection experiments indicate that error detection rate is above 98.6% for both strategies,and FPGA resources increment and performance penalty are around 10%.展开更多
Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigate...Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.展开更多
We derive analytical models of the excess carrier density distribution and the HPM （high-power mi- crowave） upset susceptibility with dependence of pulse-width, which are validated by the simulated results and exper...We derive analytical models of the excess carrier density distribution and the HPM （high-power mi- crowave） upset susceptibility with dependence of pulse-width, which are validated by the simulated results and experimental data. Mechanism analysis and model derivation verify that the excess carriers dominate the current amplification process of the latch-up. Our results reveal that the excess carrier density distribution in P-substrate behaves as pulse-width dependence. The HPM upset voltage threshold Vp decreases with the incremental pulse- width, while there is an inflection point which is caused because the excess carrier accumulation in the P-substrate will be suppressed over time. For the first time, the physical essence of the HPM pulse-width upset effect is pro- posed to be the excess carrier accumulation effect. Validation concludes that the lip model is capable of giving a reliable and accurate prediction to the HPM upset susceptibility of a CMOS inverter, which simultaneously consid- ers technology information, ambient temperature, and layout parameters. From the model, the layout parameter LB has been demonstrated to have a significant impact on the pulse-width upset effect： a CMOS inverter with minor LB is more susceptible to HPM, which enables us to put forward hardening measures for inverters that are immune from the HPM upset.展开更多
σ-LET curve is one of the important factors for orbital SEU rate prediction. SEU cross sections of static random access memory (SRAM) IDT71256 were obtained with 35 MeV/u 36Ar ions and 15.14 MeV/u 136Xe ions, acceler...σ-LET curve is one of the important factors for orbital SEU rate prediction. SEU cross sections of static random access memory (SRAM) IDT71256 were obtained with 35 MeV/u 36Ar ions and 15.14 MeV/u 136Xe ions, accelerated by Heavy Ion Research Facility in Lanzhou (HIRFL), fitted with Weibull and Lognormal function to obtain the whole σ-LET curve. The SEU rates of IDT71256 in geosynchronous and two sunsynchronous orbits were predicted with fitting parameters.展开更多
文摘Volatile organic compounds(VOC's) in air have become major concern in recent years. Biodegradation of a mixture of ethanol and methanol vapor was evaluated in a laboratory biofilter with a bed of compost and polystyrene particles using an acclimated mixed culture. The continuous performance of the biofilter was studied with different proportion of ethanol and methanol at different initial concentration and flow rates. The result showed significant removal for both ethanol and methanol, which were composition dependent. The presence of either compound in the mixture inhibited the biodegradation of the other.
基金supported by the Fundamental Research Funds for the Central Universities(No.HIT.KISTP.201404)Harbin science and innovation research special fund(No.2015RAXXJ003)Special fund for development of Shenzhen strategic emerging industries(No.JCYJ20150625142543456)
文摘Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4 simulation toolkit. The SEU cross sections and multiple cell upset(MCU) susceptibility of 3D SRAM are explored using different types and energies of heavy ions.In the simulations, the sensitivities of different dies of 3D SRAM show noticeable discrepancies for low linear energy transfers(LETs). The average percentage of MCUs of 3D SRAM increases from 17.2 to 32.95%, followed by the energy of ^(209)Bi decreasing from 71.77 to 38.28 MeV/u. For a specific LET, the percentage of MCUs presents a notable difference between the face-to-face and back-toface structures. In the back-to-face structure, the percentage of MCUs increases with a deeper die, compared with the face-to-face structure. The simulation method and process are verified by comparing the SEU cross sections of planar SRAM with experimental data. The upset cross sections of the planar process and 3D integrated SRAM are analyzed. The results demonstrate that the 3D SRAM sensitivity is not greater than that of the planar SRAM. The 3D process technology has the potential to be applied to the aerospace and military fields.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134)
文摘We investigate the impact of heavy ion irradiation on a hypothetical static random access memory （SRAM） device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indis- pensable effects on multiple-bit upsets （MBUs）, and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.
基金supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134)
文摘Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （SEU） cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer （LET） value of 41 MeV/（mg/cm2）, which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of - 9.5 MeV/（mg/cm2）, no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset （DBU） patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects （SEE） sensitivity, especially in MBU-sensitive devices.
基金supported by National Natural Science Foundation of China(No.61402226)supported by the Fundamental Research Funds for the Central Universities of China(No.NS2014036)
文摘Abstract To improve the reliability of spaceborne electronic systems, a fault-tolerant strategy of selective triple modular redundancy （STMR） based on multi-objective optimization and evolvable hardware （EHW） against single-event upsets （SEUs） for circuits implemented on field pro- grammable gate arrays （FPGAs） based on static random access memory （SRAM） is presented in this paper. Various topologies of circuit with the same functionality are evolved using EHW firstly. Then the SEU-sensitive gates of each circuit are identified using signal probabilities of all the lines in it, and each circuit is hardened against SEUs by selectively applying triple modular redundancy （TMR） to these SEU-sensitive gates. Afterward, each circuit hardened has been evaluated by SEU Simulation, and the multi-objective optimization technology is introduced to optimize the area overhead and the number of functional errors of all the circuits, The proposed fault-tolerant strategy is tested on four circuits from microelectronics center of North Carolina （MCNC） benchmark suite. The experimental results show that it can generate innovative trade-off solutions to compromise between hardware resource consumption and system reliability. The maximum savings in the area overhead of the STMR circuit over the full TMR design is 58% with the same SEU immunity.
基金Project supported by the National Natural Science Foundation of China(Grant No.616340084)the Youth Innovation Promotion Association of CAS(Grant No.2014101)+1 种基金the International Cooperation Project of CASthe Austrian-Chinese Cooperative R&D Projects(Grant No.172511KYSB20150006)
文摘Upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory induced by accelerated ^（129）Xe and ^（209）Bi ions are investigated in detail. The linear energy transfer covers the range from 50 to 99.8 Me V/（mg/cm^2）. When the memory chips are powered off during heavy ions irradiation, single-event-latch-up and single-event-function-interruption are excluded,and only 0-〉1 upset errors in the memory array are observed. These error bit rates seem very difficult to achieve and cannot be simply recovered based on the power cycle. The number of error bits shows a strong dependence on the linear energy transfer（LET）. Under room-temperature annealing conditions, the upset errors can be reduced by about two orders of magnitude using rewrite/reprogram operations, but they subsequently increase once again in a few minutes after the power cycle. High-temperature annealing can diminish almost all error bits, which are affected by the lower LET ^（129）Xe ions. The percolation path between the floating-gate（FG） and the substrate contributes to the radiation-induced leakage current, and has been identified as the root cause of the upset errors of the Flash memory array in this work.
基金supported by the National Natural Science Foundation of China(Grant No.60776034)the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(Grant No.2015-0214.XY.K)
文摘The instantaneous reversible soft logic upset induced by the electromagnetic interference（EMI） severely affects the performances and reliabilities of complementary metal–oxide–semiconductor（CMOS） inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal–oxide–semiconductor field-effect transistor（MOSFET） in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.
基金supported by the State Key Program of the National Natural Science Foundation of China (Grant No.60836004)the National Natural Science Foundation of China (Grant Nos.61076025 and 61006070)
文摘Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.
基金supported by the National Natural Science Foundation of China (Nos. 60633060, 60876028).
文摘Due to aggressive technology scaling, radiation-induced soft errors have become a serious reliability concern in VLSI chip design. This paper presents a novel radiation hardened by design latch with high single-eventupset （SEU） immunity. The proposed latch can effectively mitigate SEU by internal dual interlocked scheme. The propagation delay, power dissipation and power delay product of the presented latch are evaluated by detailed SPICE simulations. Compared with previous SEU-hardening solutions such as TMR-Latch, the presented latch is more area efficient, delay and power efficient. Fault injection simulations also demonstrate the robustness of the presented latch even under high energy particle strikes.
基金supported by the National High Technology Research and Development Program of China ("863" Program) (Grant No. 2006SQ710375)the Civil Aerospace Technologies Advanced Research Pro-gram of China (Grant No. C1320061301)Ministries and Commissions’Advanced Research Found of China (Grant No. 9140A20070209KG0160)
文摘According to the SRAM-based FPGA's single event effect problem in space application,single event upset induced multi-block error(SEU-MBE) phenomenon and its mitigation strategy are studied in the paper.After analyzing the place and route result,the paper points out that the essence of SEU-MBE is that some important modules exceed the safe internal distance.Two approaches,area constraint method(ACM) and incremental route algorithm(IRA),are proposed,which can reduce the error rate by manipulating programmable switch matrix and interconnection points within FPGA route resource.Fault injection experiments indicate that error detection rate is above 98.6% for both strategies,and FPGA resources increment and performance penalty are around 10%.
基金Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004)Hunan Provincial Innovation Foundation for Postgraduates,China (Grant No. CX2011B026)
文摘Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.
基金Project supported by the National Natural Science Foundation of China(No.60776034)the State Key Development Program for Basic Research of China(No.2014CB339900)
文摘We derive analytical models of the excess carrier density distribution and the HPM （high-power mi- crowave） upset susceptibility with dependence of pulse-width, which are validated by the simulated results and experimental data. Mechanism analysis and model derivation verify that the excess carriers dominate the current amplification process of the latch-up. Our results reveal that the excess carrier density distribution in P-substrate behaves as pulse-width dependence. The HPM upset voltage threshold Vp decreases with the incremental pulse- width, while there is an inflection point which is caused because the excess carrier accumulation in the P-substrate will be suppressed over time. For the first time, the physical essence of the HPM pulse-width upset effect is pro- posed to be the excess carrier accumulation effect. Validation concludes that the lip model is capable of giving a reliable and accurate prediction to the HPM upset susceptibility of a CMOS inverter, which simultaneously consid- ers technology information, ambient temperature, and layout parameters. From the model, the layout parameter LB has been demonstrated to have a significant impact on the pulse-width upset effect： a CMOS inverter with minor LB is more susceptible to HPM, which enables us to put forward hardening measures for inverters that are immune from the HPM upset.
基金This work was supported by the National Natural Science Foundation of China (Grant Nos. 19775058 and 10075064)the Chinese Academy of Sciences.
文摘σ-LET curve is one of the important factors for orbital SEU rate prediction. SEU cross sections of static random access memory (SRAM) IDT71256 were obtained with 35 MeV/u 36Ar ions and 15.14 MeV/u 136Xe ions, accelerated by Heavy Ion Research Facility in Lanzhou (HIRFL), fitted with Weibull and Lognormal function to obtain the whole σ-LET curve. The SEU rates of IDT71256 in geosynchronous and two sunsynchronous orbits were predicted with fitting parameters.
