摘要
Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.
Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.
基金
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004)
Hunan Provincial Innovation Foundation for Postgraduates,China (Grant No. CX2011B026)
