A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the incr...A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the increase of the external resistor R_b at base makes the burnout time of the device decrease slightly,the increase of the external voltage source V_（be） at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage,and the increase of the external resistor R_e can remarkably reduce the voltage drops added to the device and improve the durability of the device.In the final analysis,the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.展开更多
基于In GaP/GaAs HBT工艺设计了一款工作在1. 8 GHz的三级Doherty功率放大器,第一、二级为驱动级,第三级为Doherty放大器。通过分析Doherty结构,在原有基础上重新设计Doherty电路,使用LC元件替代微带线,减小功率分配网络与合路匹配网络...基于In GaP/GaAs HBT工艺设计了一款工作在1. 8 GHz的三级Doherty功率放大器,第一、二级为驱动级,第三级为Doherty放大器。通过分析Doherty结构,在原有基础上重新设计Doherty电路,使用LC元件替代微带线,减小功率分配网络与合路匹配网络的面积,进而缩小整体电路的面积。将输入、输出匹配网络及功分、合路部分集成至基板上,整体封装尺寸5 mm×5 mm。测试结果表明,芯片输入、输出回波损耗优于-15 d B,放大器整体增益优于33 d B,3 d B压缩点输出功率35 d Bm,其中第三级Doherty放大器峰值功率附加效率(PAE) 47. 9%,8 d B回退点的功率附加效率32. 7%。展开更多
基金Project supported by the National Natural Science Foundation of China(No.60776034).
文摘A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the increase of the external resistor R_b at base makes the burnout time of the device decrease slightly,the increase of the external voltage source V_（be） at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage,and the increase of the external resistor R_e can remarkably reduce the voltage drops added to the device and improve the durability of the device.In the final analysis,the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.
文摘基于In GaP/GaAs HBT工艺设计了一款工作在1. 8 GHz的三级Doherty功率放大器,第一、二级为驱动级,第三级为Doherty放大器。通过分析Doherty结构,在原有基础上重新设计Doherty电路,使用LC元件替代微带线,减小功率分配网络与合路匹配网络的面积,进而缩小整体电路的面积。将输入、输出匹配网络及功分、合路部分集成至基板上,整体封装尺寸5 mm×5 mm。测试结果表明,芯片输入、输出回波损耗优于-15 d B,放大器整体增益优于33 d B,3 d B压缩点输出功率35 d Bm,其中第三级Doherty放大器峰值功率附加效率(PAE) 47. 9%,8 d B回退点的功率附加效率32. 7%。
