High-performance, Si-based three-dimensional （3D） microbattery systems for powering micro/nano- electromechanical systems and lab-on-chip smart electro- nic devices have attracted increasing research attention. Thes...High-performance, Si-based three-dimensional （3D） microbattery systems for powering micro/nano- electromechanical systems and lab-on-chip smart electro- nic devices have attracted increasing research attention. These systems are characterized by compatible fabrication and integratibility resulting from the silicon-based tech- nologies used in their production. The use of support substrates, electrodes or current collectors, electrolytes, and even batteries used in 3D layouts has become increasingly important in fabricating microbatteries with high energy, high power density, and wide-ranging applications. In this review, Si-based 3D microbatteries and related fabrication technologies, especially the pro- duction of micro-lithium ion batteries, are reviewed and discussed in detail in order to provide guidance for the design and fabrication.展开更多
Background: Osteotomy wafers were routinely used in orthognathic surgery for repositioning the mobilized maxilla to achieve the planned final occlusion. Objectives: The aim of the current study was to determine compar...Background: Osteotomy wafers were routinely used in orthognathic surgery for repositioning the mobilized maxilla to achieve the planned final occlusion. Objectives: The aim of the current study was to determine comparison of thick and thin intermediate wafer in maxillary Le Fort I osteotomies. Methods: This study was done in 9 patients who had maxillary prognathism or retrognathism abnormality. The maxillary cast was oriented using articulator after facebow transfer. Then photographic and cephalometric data was used to determine proper dental arch segments. All 9 patients had Le Fort I combined with mandibular sagittal split osteotomies. The Le Fort I surgery was done on lateral, septum and medial sinus of nasal and trigomaxillary. The cast was removed from the base articulator and think and thick wafers were fabricated for each. Then the wafers were fixed in 1, 2 and 3 mm anterior (A1, A2 and A3, respectively). After mobilization of the maxilla and adequate bone removal, the jaws were held in occlusion with the thin intermediate wafer. The maxilla was then located against the stable part of the facial skeleton above using the yet unoperated mandible as an autorotated guide. Then the superior reposition >1 or Results: According to the results, the superior reposition was higher in thin wafers fixed in A3 > A2 compared to A1. Also, the same result was detected in thick wafers fixed in A3 > A2 compared to A1, respectively. However, there was no significant difference in both thin and thick wafers in each fixed locations. Conclusion: These results suggest thick wafers have acceptable results in maxillary Le Fort I osteotomies.展开更多
The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoel...The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on singlecrystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel(Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the Cu Ni alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition(CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays(LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for highperformance electronics and optoelectronics that are compatible with wafer process.展开更多
文摘High-performance, Si-based three-dimensional （3D） microbattery systems for powering micro/nano- electromechanical systems and lab-on-chip smart electro- nic devices have attracted increasing research attention. These systems are characterized by compatible fabrication and integratibility resulting from the silicon-based tech- nologies used in their production. The use of support substrates, electrodes or current collectors, electrolytes, and even batteries used in 3D layouts has become increasingly important in fabricating microbatteries with high energy, high power density, and wide-ranging applications. In this review, Si-based 3D microbatteries and related fabrication technologies, especially the pro- duction of micro-lithium ion batteries, are reviewed and discussed in detail in order to provide guidance for the design and fabrication.
文摘Background: Osteotomy wafers were routinely used in orthognathic surgery for repositioning the mobilized maxilla to achieve the planned final occlusion. Objectives: The aim of the current study was to determine comparison of thick and thin intermediate wafer in maxillary Le Fort I osteotomies. Methods: This study was done in 9 patients who had maxillary prognathism or retrognathism abnormality. The maxillary cast was oriented using articulator after facebow transfer. Then photographic and cephalometric data was used to determine proper dental arch segments. All 9 patients had Le Fort I combined with mandibular sagittal split osteotomies. The Le Fort I surgery was done on lateral, septum and medial sinus of nasal and trigomaxillary. The cast was removed from the base articulator and think and thick wafers were fabricated for each. Then the wafers were fixed in 1, 2 and 3 mm anterior (A1, A2 and A3, respectively). After mobilization of the maxilla and adequate bone removal, the jaws were held in occlusion with the thin intermediate wafer. The maxilla was then located against the stable part of the facial skeleton above using the yet unoperated mandible as an autorotated guide. Then the superior reposition >1 or Results: According to the results, the superior reposition was higher in thin wafers fixed in A3 > A2 compared to A1. Also, the same result was detected in thick wafers fixed in A3 > A2 compared to A1, respectively. However, there was no significant difference in both thin and thick wafers in each fixed locations. Conclusion: These results suggest thick wafers have acceptable results in maxillary Le Fort I osteotomies.
基金supported by the National Basic Research Program of China(2016YFA0200101 and 2014CB932500)the National Natural Science Foundation of China(21525310,51432002,51520105003,61432007,and 61176052)Beijing Municipal Science&Technology Commission(Z161100002116021 and Z181100004818001)
文摘The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on singlecrystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel(Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the Cu Ni alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition(CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays(LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for highperformance electronics and optoelectronics that are compatible with wafer process.
