研究了一种基于波分复用原理的准分布式光纤表面等离子体波传感器。应用光波导理论和多层膜反射理论分析了表面等离子体波效应在同一光纤探头中连续被激励的原理及其传感模型。通过数值模拟和相应实验分别考察了蒸镀调制层对表面等离子...研究了一种基于波分复用原理的准分布式光纤表面等离子体波传感器。应用光波导理论和多层膜反射理论分析了表面等离子体波效应在同一光纤探头中连续被激励的原理及其传感模型。通过数值模拟和相应实验分别考察了蒸镀调制层对表面等离子体波共振（SPR）效果的影响，并在此基础上给出了设计的一般步骤和原则。实验结果表明，蒸镀不同厚度的Ta2O5薄膜将导致表面等离子体波共振光谱发生偏移，且随着膜厚增加而逐渐发生红移；当液体折射率no处于1．333～1．388之间时，蒸镀有Ta2O5薄膜的光纤表面等离子体波传感器波长灵敏度达到2235nm／RIU（Refractive Index Unit）；通过在一支光纤探头上依次加工两个表面等离子体波传感区域，实现了对光波信号的连续调制。展开更多
A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in de...A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.展开更多
The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal ph...The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.展开更多
Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, a...Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, and laser- induced damage threshold （LIDT） are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT, which is mainly due to the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect.展开更多
Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 ...Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 films became crystalline when annealed at or above 650℃and remained amorphous below 650℃.The effects of annealing on the optical properties of Ta_2O_5 film were also discussed.It is estimated that the refraction indexes and the optical energy gaps of both amorphous Ta_2O_5 film and crystal one are stable.The optical energy gap of as-deposited Ta_2O_5 film is about 4.81 eV.The above results indicate that Ta_2O_5 films have a promising application in the optical devices.展开更多
文摘研究了一种基于波分复用原理的准分布式光纤表面等离子体波传感器。应用光波导理论和多层膜反射理论分析了表面等离子体波效应在同一光纤探头中连续被激励的原理及其传感模型。通过数值模拟和相应实验分别考察了蒸镀调制层对表面等离子体波共振（SPR）效果的影响，并在此基础上给出了设计的一般步骤和原则。实验结果表明，蒸镀不同厚度的Ta2O5薄膜将导致表面等离子体波共振光谱发生偏移，且随着膜厚增加而逐渐发生红移；当液体折射率no处于1．333～1．388之间时，蒸镀有Ta2O5薄膜的光纤表面等离子体波传感器波长灵敏度达到2235nm／RIU（Refractive Index Unit）；通过在一支光纤探头上依次加工两个表面等离子体波传感区域，实现了对光波信号的连续调制。
文摘A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076055)the Program for Innovative Research Teams in Zhejiang Normal Universitythe Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (Grant No. FDS KL2011_04)
文摘The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61107080 and 50921002)the Natural Science Foundation of Jiangsu Province,China (Grant No. BK2011223)+2 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (New Teachers) (Grant No.20110095120018)the China Postdoctoral Science Foundation (Grant No. 20110491472)the Fundamental Research Funds for the Central Universities,China (Grant No. 2012QNA03)
文摘Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, and laser- induced damage threshold （LIDT） are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT, which is mainly due to the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect.
文摘Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 films became crystalline when annealed at or above 650℃and remained amorphous below 650℃.The effects of annealing on the optical properties of Ta_2O_5 film were also discussed.It is estimated that the refraction indexes and the optical energy gaps of both amorphous Ta_2O_5 film and crystal one are stable.The optical energy gap of as-deposited Ta_2O_5 film is about 4.81 eV.The above results indicate that Ta_2O_5 films have a promising application in the optical devices.
