Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make i...Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.展开更多
In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substra...In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substrates was improved by adding a 33% aqueous solution of CH 3CH 2OH to the mixed sols of LiNb(OCH 2CH 3) 6 and LiTa(OCH 2CH 3) 6 . The crystallization behavior of LiNb 1- x Ta x O 3 films on Si(111) substrates has been studied. Highly c axis oriented LiNb 1- x Ta x O 3 films have been obtained within the tantalum composition range of \{0< x <0 33\}. Some factors such as the hydrogen termination of the silicon surface, the RTP annealing process that provides the unidirectional heat flow and the preheating temperature are discussed to analyze the crystallization of the c axis oriented films.展开更多
The initial stage of Ag film growth on Cu(100). Ta(100) and Ta(110) single crystals as well as YBaCuO on Si single crystal covered by Pd was investigated in situ by means of LAS 600 surface analysis system with a sput...The initial stage of Ag film growth on Cu(100). Ta(100) and Ta(110) single crystals as well as YBaCuO on Si single crystal covered by Pd was investigated in situ by means of LAS 600 surface analysis system with a sputtering source in sample preparation chamber. The results show that the initial state for Ag / Cu(100) film growth is typical S-K model, for Ag / Ta(100) and Ag / Ta(110)they have the same S-K characteristics, but due to the different surface energies of two crystalline planes. there is some difference for Ag / Ta (100) and Ag / Ta(110). YBCO sputterjng process is rather complex and Cu is the first element appearing in the film.展开更多
研究了一种基于波分复用原理的准分布式光纤表面等离子体波传感器。应用光波导理论和多层膜反射理论分析了表面等离子体波效应在同一光纤探头中连续被激励的原理及其传感模型。通过数值模拟和相应实验分别考察了蒸镀调制层对表面等离子...研究了一种基于波分复用原理的准分布式光纤表面等离子体波传感器。应用光波导理论和多层膜反射理论分析了表面等离子体波效应在同一光纤探头中连续被激励的原理及其传感模型。通过数值模拟和相应实验分别考察了蒸镀调制层对表面等离子体波共振（SPR）效果的影响，并在此基础上给出了设计的一般步骤和原则。实验结果表明，蒸镀不同厚度的Ta2O5薄膜将导致表面等离子体波共振光谱发生偏移，且随着膜厚增加而逐渐发生红移；当液体折射率no处于1．333～1．388之间时，蒸镀有Ta2O5薄膜的光纤表面等离子体波传感器波长灵敏度达到2235nm／RIU（Refractive Index Unit）；通过在一支光纤探头上依次加工两个表面等离子体波传感区域，实现了对光波信号的连续调制。展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718700)the National Natural Science Foundation of China(Grant No.12174347)+1 种基金the Synergetic Extreme Condition User Facility(SECUF)the Center for Materials Genome。
文摘Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.
基金Supported by the National Natural Science Foundation of China(No.2 0 1710 15 )
文摘In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substrates was improved by adding a 33% aqueous solution of CH 3CH 2OH to the mixed sols of LiNb(OCH 2CH 3) 6 and LiTa(OCH 2CH 3) 6 . The crystallization behavior of LiNb 1- x Ta x O 3 films on Si(111) substrates has been studied. Highly c axis oriented LiNb 1- x Ta x O 3 films have been obtained within the tantalum composition range of \{0< x <0 33\}. Some factors such as the hydrogen termination of the silicon surface, the RTP annealing process that provides the unidirectional heat flow and the preheating temperature are discussed to analyze the crystallization of the c axis oriented films.
文摘The initial stage of Ag film growth on Cu(100). Ta(100) and Ta(110) single crystals as well as YBaCuO on Si single crystal covered by Pd was investigated in situ by means of LAS 600 surface analysis system with a sputtering source in sample preparation chamber. The results show that the initial state for Ag / Cu(100) film growth is typical S-K model, for Ag / Ta(100) and Ag / Ta(110)they have the same S-K characteristics, but due to the different surface energies of two crystalline planes. there is some difference for Ag / Ta (100) and Ag / Ta(110). YBCO sputterjng process is rather complex and Cu is the first element appearing in the film.
文摘研究了一种基于波分复用原理的准分布式光纤表面等离子体波传感器。应用光波导理论和多层膜反射理论分析了表面等离子体波效应在同一光纤探头中连续被激励的原理及其传感模型。通过数值模拟和相应实验分别考察了蒸镀调制层对表面等离子体波共振（SPR）效果的影响，并在此基础上给出了设计的一般步骤和原则。实验结果表明，蒸镀不同厚度的Ta2O5薄膜将导致表面等离子体波共振光谱发生偏移，且随着膜厚增加而逐渐发生红移；当液体折射率no处于1．333～1．388之间时，蒸镀有Ta2O5薄膜的光纤表面等离子体波传感器波长灵敏度达到2235nm／RIU（Refractive Index Unit）；通过在一支光纤探头上依次加工两个表面等离子体波传感区域，实现了对光波信号的连续调制。
