A novel structure for designing and fabricating a power static induction transistor（SIT）with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by ...A novel structure for designing and fabricating a power static induction transistor（SIT）with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance,and to avoid the parallel-current effect in particular.Three ring-shape junctions（RSJ）are arranged around the gate junction to reduce the electric field intensity.It is important to achieve maximum gate–source breakdown voltage BVGS, gate–drain breakdown voltage BVGD and blocking voltage for high power application.A number of technological methods to increase BVGD and BVGS are presented.The BVGS of the power SIT has been increased to 110 V from a previous value of 50–60 V,and the performance of the power SIT has been greatly improved.The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum BVGS of the structure are also presented.展开更多
The organic static induction transistor （OSIT） fabricated with organic semiconductor material copper-phthalocyanine （CuPc） is discussed in the paper. It has Schottky Gate electrode and sandwich structure of Au/CuP...The organic static induction transistor （OSIT） fabricated with organic semiconductor material copper-phthalocyanine （CuPc） is discussed in the paper. It has Schottky Gate electrode and sandwich structure of Au/CuPc/Al/CuPc/Au/glass. The operation mechanism of the device is studied on the physical model with practical parameters. Potential distribution and field intensity distribution in the conduction channel are computed by using finite-element method. By processing static experimental data with some mathematic tools, the V-I expression of CuPc/Al Schottky Gate is obtained and it is verified that OSIT has insaturation current property along with the increase of Drain bias voltage. By using AC small signal circuit model and appropriate numerical simulation method, the dynamic operating characteristics are investigated, and some influenced factors are analyzed.展开更多
This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best the...This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25 ℃-85 ℃ and 20% in -55 ℃-25 ℃.展开更多
The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the swi...The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.展开更多
基金Supported by the Scientific and Technological Supporting Programme of Gansu Province(No.090GKCA052)
文摘A novel structure for designing and fabricating a power static induction transistor（SIT）with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance,and to avoid the parallel-current effect in particular.Three ring-shape junctions（RSJ）are arranged around the gate junction to reduce the electric field intensity.It is important to achieve maximum gate–source breakdown voltage BVGS, gate–drain breakdown voltage BVGD and blocking voltage for high power application.A number of technological methods to increase BVGD and BVGS are presented.The BVGS of the power SIT has been increased to 110 V from a previous value of 50–60 V,and the performance of the power SIT has been greatly improved.The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum BVGS of the structure are also presented.
基金Project supported by Special Funds of National Rail way Ministry(Grant No .J2000Z057),and Scientific Research Foundation forthe Returned Overseas Chinese Scholars , National EducationMinistry (Grant No .2000-367)
文摘The organic static induction transistor （OSIT） fabricated with organic semiconductor material copper-phthalocyanine （CuPc） is discussed in the paper. It has Schottky Gate electrode and sandwich structure of Au/CuPc/Al/CuPc/Au/glass. The operation mechanism of the device is studied on the physical model with practical parameters. Potential distribution and field intensity distribution in the conduction channel are computed by using finite-element method. By processing static experimental data with some mathematic tools, the V-I expression of CuPc/Al Schottky Gate is obtained and it is verified that OSIT has insaturation current property along with the increase of Drain bias voltage. By using AC small signal circuit model and appropriate numerical simulation method, the dynamic operating characteristics are investigated, and some influenced factors are analyzed.
文摘This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25 ℃-85 ℃ and 20% in -55 ℃-25 ℃.
基金supported by the Scientific and Technological Supporting Program of Gansu Province,China(No.097GKCA052)the Foundamental Research Funds for the Central Universities(No.lzujbky-2009-14)
文摘The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.
