Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi...Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.展开更多
基于解析分析对比了大尺寸与深亚微米尺度下静态随机存取存储器(static random access memory,SRAM)单元单粒子翻转敏感性的表征值及引入累积辐照后的变化趋势.同时借助仿真模拟计算了0.18μm工艺对应的六管SRAM单元在对应不同累积剂量...基于解析分析对比了大尺寸与深亚微米尺度下静态随机存取存储器(static random access memory,SRAM)单元单粒子翻转敏感性的表征值及引入累积辐照后的变化趋势.同时借助仿真模拟计算了0.18μm工艺对应的六管SRAM单元在对应不同累积剂量情况下,离子分别入射不同中心单管时的电学响应变化,计算结果与解析分析所得推论相一致,即只有当累积辐照阶段与单粒子作用阶段存储相反数值时,SRAM单元的单粒子翻转敏感性才会增强.展开更多
σ-LET curve is one of the important factors for orbital SEU rate prediction. SEU cross sections of static random access memory (SRAM) IDT71256 were obtained with 35 MeV/u 36Ar ions and 15.14 MeV/u 136Xe ions, acceler...σ-LET curve is one of the important factors for orbital SEU rate prediction. SEU cross sections of static random access memory (SRAM) IDT71256 were obtained with 35 MeV/u 36Ar ions and 15.14 MeV/u 136Xe ions, accelerated by Heavy Ion Research Facility in Lanzhou (HIRFL), fitted with Weibull and Lognormal function to obtain the whole σ-LET curve. The SEU rates of IDT71256 in geosynchronous and two sunsynchronous orbits were predicted with fitting parameters.展开更多
基金supported by the State Key Program of the National Natural Science Foundation of China (Grant No.60836004)the National Natural Science Foundation of China (Grant Nos.61076025 and 61006070)
文摘Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.
文摘基于解析分析对比了大尺寸与深亚微米尺度下静态随机存取存储器(static random access memory,SRAM)单元单粒子翻转敏感性的表征值及引入累积辐照后的变化趋势.同时借助仿真模拟计算了0.18μm工艺对应的六管SRAM单元在对应不同累积剂量情况下,离子分别入射不同中心单管时的电学响应变化,计算结果与解析分析所得推论相一致,即只有当累积辐照阶段与单粒子作用阶段存储相反数值时,SRAM单元的单粒子翻转敏感性才会增强.
基金This work was supported by the National Natural Science Foundation of China (Grant Nos. 19775058 and 10075064)the Chinese Academy of Sciences.
文摘σ-LET curve is one of the important factors for orbital SEU rate prediction. SEU cross sections of static random access memory (SRAM) IDT71256 were obtained with 35 MeV/u 36Ar ions and 15.14 MeV/u 136Xe ions, accelerated by Heavy Ion Research Facility in Lanzhou (HIRFL), fitted with Weibull and Lognormal function to obtain the whole σ-LET curve. The SEU rates of IDT71256 in geosynchronous and two sunsynchronous orbits were predicted with fitting parameters.