A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements,is designed and fabricated.The minim...A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements,is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between -12 and -19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW.展开更多
A 10-MHz face shear （FS） square micro- mechanical resonator based on silicon-on-insulator （SO1） technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resi...A 10-MHz face shear （FS） square micro- mechanical resonator based on silicon-on-insulator （SO1） technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 k~ can be obtained with an FS mode resonator via finite element （FE） simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.展开更多
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured ...An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions.展开更多
We present integrated-optic building blocks and functional photonic devices based on amorphous siliconon-insulator technology. Efficient deep-etched fiber-to-chip grating couplers, low-loss single-mode photonic wire w...We present integrated-optic building blocks and functional photonic devices based on amorphous siliconon-insulator technology. Efficient deep-etched fiber-to-chip grating couplers, low-loss single-mode photonic wire waveguides, and compact power splitters are presented. Based on the sub-μm photonic wires, 2 × 2 Mach–Zehnder interferometers and add/drop microring resonators(MRRs) with low device footprints and high finesse up to 200 were realized and studied. Compact polarization rotators and splitters with ≥10 d B polarization extinction ratio were fabricated for the polarization management on-chip. The tuning and trimming capabilities of the material platform are demonstrated with efficient microheaters and a permanent device trimming method, which enabled the realization of energy-efficient photonic circuits. Wavelength multiplexers in the form of cascaded filter banks and 4 × 4 routers based on MRR switches are presented. Fabrication imperfections were analyzed and permanently corrected by an accurate laser-trimming method, thus enabling eight-channel multiplexers with record low metrics of sub-m W static power consumption and ≤1°C temperature overhead. The high quality of the functional devices, the high tuning efficiency, and the excellent trimming capabilities demonstrate the potential to realize low-cost, densely integrated, and ultralow-power 3D-stacked photonic circuits on top of CMOS microelectronics.展开更多
Great efforts has been made on fabricating photonic crystals （PCs） with photonic band gaps （PBGs） during the past decade. Three-dimensional （3D） log pile PC was fabricated fast by direct femtosecond laser writin...Great efforts has been made on fabricating photonic crystals （PCs） with photonic band gaps （PBGs） during the past decade. Three-dimensional （3D） log pile PC was fabricated fast by direct femtosecond laser writing in ORMOCER. Qualitative analysis of the errors of PC was investigated using the Image Pro Plus. Surface qualities such as bending, distortion, and surface roughness were shown, and the band gap in the infrared wavelength region was observed. Meanwhile, the theory was experimentally verified that the center of PBG diminishes as the crystal lattice period reduces. Therefore, it is possible to fabricate PCs whose band gap range is from the near-infrared to visible wave band.展开更多
In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve...In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simulation tool PISCES-II were used to analyze the dc and transient characteristics of the device. The device has a response time (including rise time and fall time) less than 200 ns, much faster than the thermooptic and micro-electromechanical systems (MEMSs) based VOAs.展开更多
Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functions on a silicon wafer. In this letter, a 1 x 1 multimode interference (MMI) Mach-Zender interferometer (MZI) t...Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functions on a silicon wafer. In this letter, a 1 x 1 multimode interference (MMI) Mach-Zender interferometer (MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has an extinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response time is less than 30 us.展开更多
A simple method to fabricate vertically coupled micro-ring resonators in amorphous silicon-on-insulator is created by a three-step lithography process. First, the linear loss at 1.55 μm of the a-Si：H film is calcula...A simple method to fabricate vertically coupled micro-ring resonators in amorphous silicon-on-insulator is created by a three-step lithography process. First, the linear loss at 1.55 μm of the a-Si：H film is calculated to be 0.2 =k 0.05 dB/cm. Then, the bottom line waveguide of Su-8 with a flat top surface of 300 nm is created by etching. The thickness of Su-8 can easily be controlled by the etching time. Finally, by opening the window pattern and etching several layers, the first layer marks made by electron beam lithography are found with a 50 nm resolution, and the high quality of the micro-ring resonator is demonstrated.展开更多
A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth...A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.展开更多
文摘A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements,is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between -12 and -19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW.
基金supported by the National Natural Science Foundation of Chinathe China Academy of Engineering Physics under Grand No.11176006
文摘A 10-MHz face shear （FS） square micro- mechanical resonator based on silicon-on-insulator （SO1） technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 k~ can be obtained with an FS mode resonator via finite element （FE） simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.
基金Supported by the Weapon Equipment Pre-Research Foundation of China under Grant No 9140A11020114ZK34147the Shanghai Municipal Natural Science Foundation under Grant Nos 15ZR1447100 and 15ZR1447200
文摘An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions.
基金supported by DFG and TUHH in the funding programme Open Access Publishing
文摘We present integrated-optic building blocks and functional photonic devices based on amorphous siliconon-insulator technology. Efficient deep-etched fiber-to-chip grating couplers, low-loss single-mode photonic wire waveguides, and compact power splitters are presented. Based on the sub-μm photonic wires, 2 × 2 Mach–Zehnder interferometers and add/drop microring resonators(MRRs) with low device footprints and high finesse up to 200 were realized and studied. Compact polarization rotators and splitters with ≥10 d B polarization extinction ratio were fabricated for the polarization management on-chip. The tuning and trimming capabilities of the material platform are demonstrated with efficient microheaters and a permanent device trimming method, which enabled the realization of energy-efficient photonic circuits. Wavelength multiplexers in the form of cascaded filter banks and 4 × 4 routers based on MRR switches are presented. Fabrication imperfections were analyzed and permanently corrected by an accurate laser-trimming method, thus enabling eight-channel multiplexers with record low metrics of sub-m W static power consumption and ≤1°C temperature overhead. The high quality of the functional devices, the high tuning efficiency, and the excellent trimming capabilities demonstrate the potential to realize low-cost, densely integrated, and ultralow-power 3D-stacked photonic circuits on top of CMOS microelectronics.
基金supported by the National"863"Project of China (No.2006AA04Z307)Foundation for the Author of National Excellent Doctoral Dissertation of China (No.2006039)+2 种基金the National Natural Science Foundation of China (No.50775140)Natural Science Foundation of Jiangsu Province (No.BK2006507)Jiangsu Province Research Innovation Program of College Graduate (No.CX07B_086z).
文摘Great efforts has been made on fabricating photonic crystals （PCs） with photonic band gaps （PBGs） during the past decade. Three-dimensional （3D） log pile PC was fabricated fast by direct femtosecond laser writing in ORMOCER. Qualitative analysis of the errors of PC was investigated using the Image Pro Plus. Surface qualities such as bending, distortion, and surface roughness were shown, and the band gap in the infrared wavelength region was observed. Meanwhile, the theory was experimentally verified that the center of PBG diminishes as the crystal lattice period reduces. Therefore, it is possible to fabricate PCs whose band gap range is from the near-infrared to visible wave band.
基金This work was supported by the National Natural Science Foundation of China under Grant Nos. 69896260 and 69990540, and the "973" Project by the National Science and Technology Ministry under Contract No. G20000366. Q. Yan's e-mail address is qfyan@red.s
文摘In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simulation tool PISCES-II were used to analyze the dc and transient characteristics of the device. The device has a response time (including rise time and fall time) less than 200 ns, much faster than the thermooptic and micro-electromechanical systems (MEMSs) based VOAs.
基金This work was supported by "973" Project,(No.G20000366) and‘863" Project(No.2002AA312060)from the National Science and Technology Min-istry of China, and the Key Project from National Natural Science Committee of China (Contract No.69990540
文摘Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functions on a silicon wafer. In this letter, a 1 x 1 multimode interference (MMI) Mach-Zender interferometer (MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has an extinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response time is less than 30 us.
基金supported by the National Natural Science Foundation of China (No. 11172042)the financial support from the China Scholarship Council for her joint Ph.D scholarship (No. 201306030017)supported by the Centre for Ultrahigh Bandwidth Devices for Optical Systems, Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT2600, Australia
文摘A simple method to fabricate vertically coupled micro-ring resonators in amorphous silicon-on-insulator is created by a three-step lithography process. First, the linear loss at 1.55 μm of the a-Si：H film is calculated to be 0.2 =k 0.05 dB/cm. Then, the bottom line waveguide of Su-8 with a flat top surface of 300 nm is created by etching. The thickness of Su-8 can easily be controlled by the etching time. Finally, by opening the window pattern and etching several layers, the first layer marks made by electron beam lithography are found with a 50 nm resolution, and the high quality of the micro-ring resonator is demonstrated.
基金supported by the Grant-in-Aid for Creative Scientific Research on Si CMOS Photonics in Japan.The meaeurecl devices were fabricated in the Takeda Sentanchi Facility of the University of Tokyo Japan.
文摘A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.
