Polymer-derived ceramics(PDCs) strategy shows a great deal of advantages for the fabrication of advanced ceramics. Organosilicon polymers facilitate the shaping process and different silicon-based ceramics with contro...Polymer-derived ceramics(PDCs) strategy shows a great deal of advantages for the fabrication of advanced ceramics. Organosilicon polymers facilitate the shaping process and different silicon-based ceramics with controllable components can be fabricated by modifying organosilicon polymers or adding fillers. It is worth noting that silicate ceramics can also be fabricated from organosilicon polymers by the introduction of active fillers, which could react with the produced silica during pyrolysis. The organosilicon polymer-derived ceramics show many unique properties, which have attracted many attentions in various fields. This review summarizes the typical organosilicon polymers and the processing of organosilicon polymers to fabricate silicon-based ceramics, especially highlights the three-dimensional(3 D) printing technique for shaping the organosilicon polymerderived ceramics, which makes the possibility to fabricate silicon-based ceramics with complex structure. More importantly, the recent studies on fabricating typical non-oxide and silicate ceramics derived from organosilicon polymers and their biomedical applications are highlighted.展开更多
The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the che...The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the chemical prelithiation agent is difficult to dope active Li^(+) in silicon-based anodes because of their low working voltage and sluggish Li^(+) diffusion rate. By selecting the lithium–arene complex reagent with 4-methylbiphenyl as an anion ligand and 2-methyltetrahydrofuran as a solvent, the as-prepared micro-sized Si O/C anode can achieve an ICE of nearly 100%. Interestingly, the best prelithium efficiency does not correspond to the lowest redox half-potential(E_(1/2)), and the prelithiation efficiency is determined by the specific influencing factors(E_(1/2), Li^(+) concentration, desolvation energy, and ion diffusion path). In addition, molecular dynamics simulations demonstrate that the ideal prelithiation efficiency can be achieved by choosing appropriate anion ligand and solvent to regulate the solvation structure of Li^(+). Furthermore, the positive effect of prelithiation on cycle performance has been verified by using an in-situ electrochemical dilatometry and solid electrolyte interphase film characterizations.展开更多
Based on a silicon platform, we design and fabricate a four-mode division(de)multiplexer for chip-scale optical data transmission in the 2 μm waveband for the first time, to the best of our knowledge. The(de)multiple...Based on a silicon platform, we design and fabricate a four-mode division(de)multiplexer for chip-scale optical data transmission in the 2 μm waveband for the first time, to the best of our knowledge. The(de)multiplexer is composed of three tapered directional couplers for both mode multiplexing and demultiplexing processes. In the experiment, the average crosstalk for four channels is measured to be less than-18 dB over a wide wavelength range(70 nm) from 1950 to 2020 nm, and the insertion losses are also assessed. Moreover, we further demonstrate stable 5 Gbit/s direct modulation data transmission through the fabricated silicon photonic devices with nonreturn-to-zero on–off keying signals. The experimental results show clear eye diagrams, and the penalties at a bit error rate of 3.8 × 10-3 are all less than 2.5 dB after on-chip data transmission. The obtained results indicate that the presented silicon four-mode division multiplexer in the mid-infrared wavelength band might be a promising candidate facilitating chip-scale high-speed optical interconnects.展开更多
In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally fallin...In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.展开更多
Silicon(Si)is considered a potential alternative anode for next-generation Li-ion batteries owing to its high theoretical capacity and abundance.However,the commercial use of Si anodes is hindered by their large volum...Silicon(Si)is considered a potential alternative anode for next-generation Li-ion batteries owing to its high theoretical capacity and abundance.However,the commercial use of Si anodes is hindered by their large volume expansion(~300%).Numerous efforts have been made to address this issue.Among these efforts,Si-graphite co-utilization has attracted attention as a reasonable alternative for high-energy anodes.A comparative study of representative commercial Si-based materials,such as Si nanoparticles,Si suboxides,and Si−Graphite composites(SiGC),was conducted to characterize their overall performance in high-energy lithium-ion battery(LIB)design by incorporating conventional graphite.Nano-Si was found to exhibit poor electrochemical performance,with severe volume expansion during cycling.Si suboxide provided excellent cycling stability in a full-cell evaluation with stable volume variation after 50 cycles,but had a large irreversible capacity and remarkable volume expansion during the first cycle.SiGC displayed a good initial Coulombic efficiency and the lowest volume change in the first cycle owing to the uniformly distributed nano-Si layer on graphite;however,its long-term cycling stability was relatively poor.To complement each disadvantage of Si suboxide and SiGC,a new combination of these Si-based anodes was suggested and a reasonable improvement in overall battery performance was successfully achieved.展开更多
The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which ...The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.展开更多
Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With prote...Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing.Here, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.展开更多
Silicon waveguides typically exhibit optical anisotropy,which leads to polarization correlation and single-polarization operations.This consequently creates a demand for polarization-control devices.This paper introdu...Silicon waveguides typically exhibit optical anisotropy,which leads to polarization correlation and single-polarization operations.This consequently creates a demand for polarization-control devices.This paper introduces a CMOS-compatible O-band reconfigurable TE/TM polarization rotator comprising two symmetrical polarization rotator-splitters and phase shifters.This configuration enables dynamic conversion of any linear polarization to its quadratic equivalent.Experimental results indicate that the reconfigurable polarization rotator exhibits an insertion loss of less than 1.5 dB.Furthermore,the bandwidth for a polarization extinction ratio beyond 15 dB exceeds 60 nm.展开更多
Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utiliz...Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utilization as a lithium-ion anode.Herein,a functionalized high-toughness polyimide(PDMI) is synthesized by copolymerizing the 4,4'-Oxydiphthalic anhydride(ODPA) with 4,4'-oxydianiline(ODA),2,3-diaminobenzoic acid(DABA),and 1,3-bis(3-aminopropyl)-tetramethyl disiloxane(DMS).The combination of rigid benzene rings and flexible oxygen groups(-O-) in the PDMI molecular chain via a rigidness/softness coupling mechanism contributes to high toughness.The plentiful polar carboxyl(-COOH) groups establish robust bonding strength.Rapid ionic transport is achieved by incorporating the flexible siloxane segment(Si-O-Si),which imparts high molecular chain motility and augments free volume holes to facilitate lithium-ion transport(9.8 × 10^(-10) cm^(2) s^(-1) vs.16 × 10^(-10) cm^(2) s~(-1)).As expected,the SiO_x@PDMI-1.5 electrode delivers brilliant long-term cycle performance with a remarkable capacity retention of 85% over 500 cycles at 1.3 A g^(-1).The well-designed functionalized polyimide also significantly enhances the electrochemical properties of Si nanoparticles electrode.Meanwhile,the assembled SiO_x@PDMI-1.5/NCM811 full cell delivers a high retention of 80% after 100 cycles.The perspective of the binder design strategy based on polyimide modification delivers a novel path toward high-capacity electrodes for high-energy-density batteries.展开更多
Silicon offers a high theoretical specific capacity for anodic lithium storage.However,its applications are hindered by the electrode instability caused by the sharp volume change,and the limited rate performance resu...Silicon offers a high theoretical specific capacity for anodic lithium storage.However,its applications are hindered by the electrode instability caused by the sharp volume change,and the limited rate performance resulted from the insulating property.Herein,we introduce a facile and fast method of preparing honeycomb‐like silicon‐based anodes(MXene‐Si@C)with porous structure using MXene and carbon‐coated silicon.The dual protection from both the surface coating and as‐formed interlayered vacant spaces ameliorate the volume expansion of the silicon and thus reinforce the mechanical stability of the electrode.In addition,the highly conducting MXene and the surface carbon coating form a hierarchical and consecutive electron‐conducting network with evidently reduced resistance.With this proposed composite,a high average Coulombic efficiency of 99.73%and high capacity retention of 82.4%after 300 cycles at 1 A/g can be achieved even with an areal loading around 1.5 mg/cm^(2).Coupled with an NCM523 cathode,the proof‐of‐concept full cell delivers a high capacity of 164.2mAh/g with an extremely high energy density of 574Wh/kg(based on the mass of the electrode materials)at 0.2 C and an excellent cyclability at 0.5 C of 100 cycles with decent capacity retention(80.28%).展开更多
在我们以前的工作(Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl.Phys.Lett.107 131103)中,利用掺铒(Er)二氧化钛薄膜(TiO2:Er)作为发光层,实现了基于ITO/TiO2:Er/SiO2/n+-Si结构的发光器件的Er相关可...在我们以前的工作(Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl.Phys.Lett.107 131103)中,利用掺铒(Er)二氧化钛薄膜(TiO2:Er)作为发光层,实现了基于ITO/TiO2:Er/SiO2/n+-Si结构的发光器件的Er相关可见及近红外(约1540 nm)电致发光.本文将镱(Yb)共掺入TiO2:Er薄膜中,显著增强了Er相关可见及近红外电致发光.研究表明,一定量Yb的共掺会导致TiO2:Er薄膜由锐钛矿相转变为金红石相,从而使得Er3+离子周围晶体场的对称性降低.此外,Yb3+离子比Ti4+离子具有更大的半径,这使TiO2基体中Er3+离子周围的晶体场进一步畸变.晶体场的对称性降低及畸变使得Er3+离子4f能级间的跃迁概率增大.由于上述原因,Yb在TiO2:Er薄膜的共掺显著增强了相关发光器件的电致发光.展开更多
基金support by grants from the National Natural Science Foundation of China(Grant No.51872185)the Science and Technology Commission of Shanghai Municipality(Grant No.17060502400)the University of Shanghai for Science and Technology(Grant No.2017KJFZ010).
文摘Polymer-derived ceramics(PDCs) strategy shows a great deal of advantages for the fabrication of advanced ceramics. Organosilicon polymers facilitate the shaping process and different silicon-based ceramics with controllable components can be fabricated by modifying organosilicon polymers or adding fillers. It is worth noting that silicate ceramics can also be fabricated from organosilicon polymers by the introduction of active fillers, which could react with the produced silica during pyrolysis. The organosilicon polymer-derived ceramics show many unique properties, which have attracted many attentions in various fields. This review summarizes the typical organosilicon polymers and the processing of organosilicon polymers to fabricate silicon-based ceramics, especially highlights the three-dimensional(3 D) printing technique for shaping the organosilicon polymerderived ceramics, which makes the possibility to fabricate silicon-based ceramics with complex structure. More importantly, the recent studies on fabricating typical non-oxide and silicate ceramics derived from organosilicon polymers and their biomedical applications are highlighted.
基金supported by the National Natural Science Foundation of China (21875107, U1802256, and 22209204)Leading Edge Technology of Jiangsu Province (BK20220009), the Natural Science Foundation of Jiangsu Province (BK20221140)+2 种基金the China Postdoctoral Science Foundation (2022M713364)Jiangsu Specially Appointed Professors ProgramPriority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)。
文摘The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the chemical prelithiation agent is difficult to dope active Li^(+) in silicon-based anodes because of their low working voltage and sluggish Li^(+) diffusion rate. By selecting the lithium–arene complex reagent with 4-methylbiphenyl as an anion ligand and 2-methyltetrahydrofuran as a solvent, the as-prepared micro-sized Si O/C anode can achieve an ICE of nearly 100%. Interestingly, the best prelithium efficiency does not correspond to the lowest redox half-potential(E_(1/2)), and the prelithiation efficiency is determined by the specific influencing factors(E_(1/2), Li^(+) concentration, desolvation energy, and ion diffusion path). In addition, molecular dynamics simulations demonstrate that the ideal prelithiation efficiency can be achieved by choosing appropriate anion ligand and solvent to regulate the solvation structure of Li^(+). Furthermore, the positive effect of prelithiation on cycle performance has been verified by using an in-situ electrochemical dilatometry and solid electrolyte interphase film characterizations.
基金National Natural Science Foundation of China(NSFC)(61761130082,11574001,11774116,61705072)Royal Society-Newton Advanced Fellowship+4 种基金National Program for Support of Top-notch Young ProfessionalsNatural Science Foundation of Hubei Province(2018CFA048,ZRMS2017000413)Beijing University of Posts and Telecommunications(BUPT))(IPOC2018A002)Program for HUST Academic Frontier Youth Team(2016QYTD05)Fundamental Research Funds for the Central Universities(2019kfyRCPY037)
文摘Based on a silicon platform, we design and fabricate a four-mode division(de)multiplexer for chip-scale optical data transmission in the 2 μm waveband for the first time, to the best of our knowledge. The(de)multiplexer is composed of three tapered directional couplers for both mode multiplexing and demultiplexing processes. In the experiment, the average crosstalk for four channels is measured to be less than-18 dB over a wide wavelength range(70 nm) from 1950 to 2020 nm, and the insertion losses are also assessed. Moreover, we further demonstrate stable 5 Gbit/s direct modulation data transmission through the fabricated silicon photonic devices with nonreturn-to-zero on–off keying signals. The experimental results show clear eye diagrams, and the penalties at a bit error rate of 3.8 × 10-3 are all less than 2.5 dB after on-chip data transmission. The obtained results indicate that the presented silicon four-mode division multiplexer in the mid-infrared wavelength band might be a promising candidate facilitating chip-scale high-speed optical interconnects.
基金funded by the Key Program of the National Natural Science Foundation of China(Grant No.62035001)the International Partnership Program of Chinese Academy of Sciences(No.18123KYSB20210013)the Shanghai Science and Technology Innovation Action Plan(No.22dz208700).
文摘In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.
基金the Technology Innovation Program(No.20010542,Development of Petroleum Pitch Based Conductive Material and Binder for Lithium Ion Secondary Battery and Their Application)funded by the Ministry of Trade,Industry&Energy(MOTIE,Republic of Korea)the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.2021R1A2C1095408).
文摘Silicon(Si)is considered a potential alternative anode for next-generation Li-ion batteries owing to its high theoretical capacity and abundance.However,the commercial use of Si anodes is hindered by their large volume expansion(~300%).Numerous efforts have been made to address this issue.Among these efforts,Si-graphite co-utilization has attracted attention as a reasonable alternative for high-energy anodes.A comparative study of representative commercial Si-based materials,such as Si nanoparticles,Si suboxides,and Si−Graphite composites(SiGC),was conducted to characterize their overall performance in high-energy lithium-ion battery(LIB)design by incorporating conventional graphite.Nano-Si was found to exhibit poor electrochemical performance,with severe volume expansion during cycling.Si suboxide provided excellent cycling stability in a full-cell evaluation with stable volume variation after 50 cycles,but had a large irreversible capacity and remarkable volume expansion during the first cycle.SiGC displayed a good initial Coulombic efficiency and the lowest volume change in the first cycle owing to the uniformly distributed nano-Si layer on graphite;however,its long-term cycling stability was relatively poor.To complement each disadvantage of Si suboxide and SiGC,a new combination of these Si-based anodes was suggested and a reasonable improvement in overall battery performance was successfully achieved.
基金Project supported in part by the National Key Research and Development Program of China(Grant No.2021YFB2206504)the National Natural Science Foundation of China(Grant No.62235017)the China Postdoctoral Science Foundation(Grant No.2021M703125).
文摘The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 12074368, 92165207, 12034018, and 92265113)the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300)+1 种基金the Anhui Province Natural Science Foundation (Grant No. 2108085J03)the USTC Tang Scholarship。
文摘Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing.Here, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.
基金supported by the Key R&D Program of Zhejiang Province(No.2019C03065)。
文摘Silicon waveguides typically exhibit optical anisotropy,which leads to polarization correlation and single-polarization operations.This consequently creates a demand for polarization-control devices.This paper introduces a CMOS-compatible O-band reconfigurable TE/TM polarization rotator comprising two symmetrical polarization rotator-splitters and phase shifters.This configuration enables dynamic conversion of any linear polarization to its quadratic equivalent.Experimental results indicate that the reconfigurable polarization rotator exhibits an insertion loss of less than 1.5 dB.Furthermore,the bandwidth for a polarization extinction ratio beyond 15 dB exceeds 60 nm.
基金supported by the National Natural Science Foundation of China (51673017)the National Natural Science Foundation of China (21404005)+1 种基金the Fundamental Research Funds for the Central Universities (XK1802-2)the Natural Science Foundation of Jiangsu Province (BK20150273)。
文摘Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utilization as a lithium-ion anode.Herein,a functionalized high-toughness polyimide(PDMI) is synthesized by copolymerizing the 4,4'-Oxydiphthalic anhydride(ODPA) with 4,4'-oxydianiline(ODA),2,3-diaminobenzoic acid(DABA),and 1,3-bis(3-aminopropyl)-tetramethyl disiloxane(DMS).The combination of rigid benzene rings and flexible oxygen groups(-O-) in the PDMI molecular chain via a rigidness/softness coupling mechanism contributes to high toughness.The plentiful polar carboxyl(-COOH) groups establish robust bonding strength.Rapid ionic transport is achieved by incorporating the flexible siloxane segment(Si-O-Si),which imparts high molecular chain motility and augments free volume holes to facilitate lithium-ion transport(9.8 × 10^(-10) cm^(2) s^(-1) vs.16 × 10^(-10) cm^(2) s~(-1)).As expected,the SiO_x@PDMI-1.5 electrode delivers brilliant long-term cycle performance with a remarkable capacity retention of 85% over 500 cycles at 1.3 A g^(-1).The well-designed functionalized polyimide also significantly enhances the electrochemical properties of Si nanoparticles electrode.Meanwhile,the assembled SiO_x@PDMI-1.5/NCM811 full cell delivers a high retention of 80% after 100 cycles.The perspective of the binder design strategy based on polyimide modification delivers a novel path toward high-capacity electrodes for high-energy-density batteries.
基金supported by a grant from the Research Grants Council of the Hong Kong Special Administrative Region,China(Project No.T23‐601/17‐R).
文摘Silicon offers a high theoretical specific capacity for anodic lithium storage.However,its applications are hindered by the electrode instability caused by the sharp volume change,and the limited rate performance resulted from the insulating property.Herein,we introduce a facile and fast method of preparing honeycomb‐like silicon‐based anodes(MXene‐Si@C)with porous structure using MXene and carbon‐coated silicon.The dual protection from both the surface coating and as‐formed interlayered vacant spaces ameliorate the volume expansion of the silicon and thus reinforce the mechanical stability of the electrode.In addition,the highly conducting MXene and the surface carbon coating form a hierarchical and consecutive electron‐conducting network with evidently reduced resistance.With this proposed composite,a high average Coulombic efficiency of 99.73%and high capacity retention of 82.4%after 300 cycles at 1 A/g can be achieved even with an areal loading around 1.5 mg/cm^(2).Coupled with an NCM523 cathode,the proof‐of‐concept full cell delivers a high capacity of 164.2mAh/g with an extremely high energy density of 574Wh/kg(based on the mass of the electrode materials)at 0.2 C and an excellent cyclability at 0.5 C of 100 cycles with decent capacity retention(80.28%).
文摘在我们以前的工作(Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl.Phys.Lett.107 131103)中,利用掺铒(Er)二氧化钛薄膜(TiO2:Er)作为发光层,实现了基于ITO/TiO2:Er/SiO2/n+-Si结构的发光器件的Er相关可见及近红外(约1540 nm)电致发光.本文将镱(Yb)共掺入TiO2:Er薄膜中,显著增强了Er相关可见及近红外电致发光.研究表明,一定量Yb的共掺会导致TiO2:Er薄膜由锐钛矿相转变为金红石相,从而使得Er3+离子周围晶体场的对称性降低.此外,Yb3+离子比Ti4+离子具有更大的半径,这使TiO2基体中Er3+离子周围的晶体场进一步畸变.晶体场的对称性降低及畸变使得Er3+离子4f能级间的跃迁概率增大.由于上述原因,Yb在TiO2:Er薄膜的共掺显著增强了相关发光器件的电致发光.
