Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown fiel...Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown field,and strong polarization effect,which enables the big family has a very wide application range from optoelectronic to power electronic area.Furthermore,the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization,because of the cost-effective device fabrication on the platform of Si-based integrated circuits.In this article,the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized,in which some key issues regarding to the material growth and device fabrication were reviewed.展开更多
In order to reduce the cost of solar cells or flat-panel display, it is very important to synthesis polycrystalline silicon films on low cost substrate such as glass at low temperature. In this work, electron cyclotro...In order to reduce the cost of solar cells or flat-panel display, it is very important to synthesis polycrystalline silicon films on low cost substrate such as glass at low temperature. In this work, electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system was successfully applied to synthesize poly-Si thin-film on common glass substrate using H2 as the plasma source and SiH4 (Ar:SiH4=19:1) as the precursor gas at low temperature. Since the multicusp cavity-coupling ECR plasma source was adopted to provide active precursors, the growth temperature decreased to lower than 200°C. In the plasma, the electron temperatures kT e are ～2–3 eV and the ion temperatures kT i≤1 eV. This leads to non-remarkable ion impacts during the film deposition. The characteristic of poly-Si films was investigated. It was shown that the crystalline fraction X c of the films can be up to 90% even deposit at room temperature, and the film was (220) preferably oriented. The growth behaviors of the film between the interface of glass and Si films were also discussed in detail.展开更多
采用反应溅射法在n型硅(100)衬底上制备了ZnO薄膜,分别用X射线衍射仪、原子力显微镜和荧光分光光度计对样品的结构、表面形貌和光致发光特性进行了表征。X射线衍射结果表明,实验中制备出了应变小的c轴择优取向的ZnO薄膜;原子力显微镜观...采用反应溅射法在n型硅(100)衬底上制备了ZnO薄膜,分别用X射线衍射仪、原子力显微镜和荧光分光光度计对样品的结构、表面形貌和光致发光特性进行了表征。X射线衍射结果表明,实验中制备出了应变小的c轴择优取向的ZnO薄膜;原子力显微镜观察表明,薄膜表面平整,颗粒大小约为50 nm,为柱状结构,颗粒垂直于硅衬底表面生长;在室温光致发光(PL)谱中观察到了波长位于434 nm处的较窄的强蓝光发射峰,该蓝光峰的半峰全宽约为50 m eV。对蓝光峰的发光机制进行了讨论,并推断出该蓝光峰来源于电子从Zn填隙缺陷能级向价带顶跃迁。展开更多
基金supported by the National Basic Research Program of China (2010CB923200 and 2011CB301903)the National High Technology Research and Development Program of China (2011AA03A101)+2 种基金the National Natural Science Foundation of China (61274039 and 51177175)Ph.D. Programs Foundation of Ministry of Education of China (20110171110021)the Foundation of the Key Technologies R&D Program of Guangdong Province (2010A081002005)
文摘Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown field,and strong polarization effect,which enables the big family has a very wide application range from optoelectronic to power electronic area.Furthermore,the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization,because of the cost-effective device fabrication on the platform of Si-based integrated circuits.In this article,the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized,in which some key issues regarding to the material growth and device fabrication were reviewed.
基金Supported by the Scientific Research Foundation for the Returned Overseas Chinese Scholars of State Education Ministry
文摘In order to reduce the cost of solar cells or flat-panel display, it is very important to synthesis polycrystalline silicon films on low cost substrate such as glass at low temperature. In this work, electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system was successfully applied to synthesize poly-Si thin-film on common glass substrate using H2 as the plasma source and SiH4 (Ar:SiH4=19:1) as the precursor gas at low temperature. Since the multicusp cavity-coupling ECR plasma source was adopted to provide active precursors, the growth temperature decreased to lower than 200°C. In the plasma, the electron temperatures kT e are ～2–3 eV and the ion temperatures kT i≤1 eV. This leads to non-remarkable ion impacts during the film deposition. The characteristic of poly-Si films was investigated. It was shown that the crystalline fraction X c of the films can be up to 90% even deposit at room temperature, and the film was (220) preferably oriented. The growth behaviors of the film between the interface of glass and Si films were also discussed in detail.
文摘采用反应溅射法在n型硅(100)衬底上制备了ZnO薄膜,分别用X射线衍射仪、原子力显微镜和荧光分光光度计对样品的结构、表面形貌和光致发光特性进行了表征。X射线衍射结果表明,实验中制备出了应变小的c轴择优取向的ZnO薄膜;原子力显微镜观察表明,薄膜表面平整,颗粒大小约为50 nm,为柱状结构,颗粒垂直于硅衬底表面生长;在室温光致发光(PL)谱中观察到了波长位于434 nm处的较窄的强蓝光发射峰,该蓝光峰的半峰全宽约为50 m eV。对蓝光峰的发光机制进行了讨论,并推断出该蓝光峰来源于电子从Zn填隙缺陷能级向价带顶跃迁。
