In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. Th...In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.展开更多
In this article,we report the first experimental demonstration of an eight-wavelength λ/8 phased-shifted laser array based on the REC technique in the 1.3 μm wavelength domain.Measurement results exhibit good linear...In this article,we report the first experimental demonstration of an eight-wavelength λ/8 phased-shifted laser array based on the REC technique in the 1.3 μm wavelength domain.Measurement results exhibit good linearity of lasing wavelength with+/-0.35 nm wavelength residual.The SLM property was ensured with SMSRs all larger than 38 dB.Moreover,the directmodulation performance was also tested.The experimental results show that the modulation bandwidth can reach up to 13GHz even at the small injection current of 40 mA and the measured spurious-free dynamic range(SFDR)is up to 87 dB/Hz2/3,which shows good linearity.These measurements show that REC-based λ/8 phased-shifted laser array has good modulation performance and it may find potential application in actual fiber-optic systems.展开更多
Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity ...Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser （VCSEL） in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al0.98Ga0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61090392)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300)the Key Programs of the Ministry of Education of China(Grant No.20100091110005)
文摘In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.
基金supported by the National Natural Science Foundation of China(Grant No.61090392)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300)the Key Programs of the Ministry of Education of China(Grant No.20100091110005)
文摘In this article,we report the first experimental demonstration of an eight-wavelength λ/8 phased-shifted laser array based on the REC technique in the 1.3 μm wavelength domain.Measurement results exhibit good linearity of lasing wavelength with+/-0.35 nm wavelength residual.The SLM property was ensured with SMSRs all larger than 38 dB.Moreover,the directmodulation performance was also tested.The experimental results show that the modulation bandwidth can reach up to 13GHz even at the small injection current of 40 mA and the measured spurious-free dynamic range(SFDR)is up to 87 dB/Hz2/3,which shows good linearity.These measurements show that REC-based λ/8 phased-shifted laser array has good modulation performance and it may find potential application in actual fiber-optic systems.
文摘Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser （VCSEL） in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al0.98Ga0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.
