摘要
近年来,宽带隙半导体 GaN、SiC、ZnO,弛豫铁电体PZNT,热电半导体β-FeSi_2,超导体MgB_2等功能晶体材料引起了人们的广泛关注。这些材料大多具有非常优异的性能和巨大的应用前景,但生长工业应用的体单晶非常困难。本文从晶体生长技术角度综述了这些晶体的研究进展,结合其物理化学特性探讨了单晶生长中遇到的一些关键问题。通观这些热点单晶材料的研究现状,一方面我们可以把晶体膜的制备技术看作是传统晶体生长技术的延伸,另一方面,膜技术的发展和单晶生长中存在的问题,也是对传统生长工艺的挑战。
In the recent years, some functional crystals, such as wide band-gap semiconductor GaN, SiC and ZnO, relaxor ferroelectric crystal PZNT, thermoelectric semiconductor β-FeSi2 and superconductor MgE2, have attracted much attention due to their excellent properties and potential applications in blue-light-emitting, laser, electro-optical, ultrasonic and thermoelectric devices. However, it is difficult to grow these single crystals with large size and high quality. In this paper, recent development on the crystal growth was presented and key issues of crystal growth were discussed based on the chemical and physical properties of the crystals and their melts. On the one hand the growth techniques of oriented films can be regarded as the extension of the conventional growth techniques, and on the other hand, the fast development of film technology is a real challenge to bulk crystal growth techniques.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2003年第5期469-475,共7页
Journal of Synthetic Crystals
