鉴于SiC材料具有很强的稳定性以及湿法刻蚀的种种缺点,目前主要使用干法刻蚀来刻蚀SiC材料。但是干法刻蚀后样品表面的粗糙度对器件的性能有一定的影响。针对这一问题,采用电感耦合等离子体-反应离子刻蚀技术,对SiC材料进行SF_6/O_2混...鉴于SiC材料具有很强的稳定性以及湿法刻蚀的种种缺点,目前主要使用干法刻蚀来刻蚀SiC材料。但是干法刻蚀后样品表面的粗糙度对器件的性能有一定的影响。针对这一问题,采用电感耦合等离子体-反应离子刻蚀技术,对SiC材料进行SF_6/O_2混合气体和SF_6/CF4/O_2混合气体的刻蚀,并且探究了压强、ICP功率和混合气体比例对样品表面粗糙度的影响。实验结果表明使用SF_6/O_2混合气体刻蚀后,样品的表面平整度较好。在一定RIE功率条件下,当ICP功率为700 W、压强为20 m T和SF_6/O_2为50/40 sccm时,样品表面的粗糙度最小。展开更多
The mask-free SF6/O2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence...The mask-free SF6/O2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF6/O2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF6/O2 flow ratios and etching time, the optimal etticiency of 15.7% on 50 × 50mm2 reactive ion etching textured mc-silicon silicon solar ceils is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 m V, 33.6 mA/cm2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.展开更多
文摘鉴于SiC材料具有很强的稳定性以及湿法刻蚀的种种缺点,目前主要使用干法刻蚀来刻蚀SiC材料。但是干法刻蚀后样品表面的粗糙度对器件的性能有一定的影响。针对这一问题,采用电感耦合等离子体-反应离子刻蚀技术,对SiC材料进行SF_6/O_2混合气体和SF_6/CF4/O_2混合气体的刻蚀,并且探究了压强、ICP功率和混合气体比例对样品表面粗糙度的影响。实验结果表明使用SF_6/O_2混合气体刻蚀后,样品的表面平整度较好。在一定RIE功率条件下,当ICP功率为700 W、压强为20 m T和SF_6/O_2为50/40 sccm时,样品表面的粗糙度最小。
基金Supported by the National Natural Science Foundation of China under Grant No 61306076the Youth Innovation Promotion of Chinese Academy under Grant No Y510411C31
文摘The mask-free SF6/O2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF6/O2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF6/O2 flow ratios and etching time, the optimal etticiency of 15.7% on 50 × 50mm2 reactive ion etching textured mc-silicon silicon solar ceils is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 m V, 33.6 mA/cm2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.
