Room-temperature ferromagnetism was observed in （In0.95-xSnxFe0.05）203 （x = 0-0.09） films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into ...Room-temperature ferromagnetism was observed in （In0.95-xSnxFe0.05）203 （x = 0-0.09） films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism.展开更多
Zinc oxide(ZnO) doped with erbium at different concentrations was synthesized by solid-state reaction method and characterized by X-ray diffraction(XRD), scanning electron microscopic(SEM), UVabsorption spectroscopy, ...Zinc oxide(ZnO) doped with erbium at different concentrations was synthesized by solid-state reaction method and characterized by X-ray diffraction(XRD), scanning electron microscopic(SEM), UVabsorption spectroscopy, photoluminescence(PL) study and vibrating sample magnetometer. The XRD studies exhibit the presence of wurtzite crystal structure similar to the parent compound ZnO in 1% Er^(3+)doped Zn O,suggesting that doped Er^(3+)ions sit at the regular Zn^(2+)sites. However, same studies spread over the samples with Er^(3+)content>1% reveals the occurrence of secondary phase. SEM images of 1% Er^(3+)doped ZnO show the polycrystalline nature of the synthesized sample. UV-visible absorption spectrum of Er^(3+)doped ZnO nanocrystals shows a strong absorption peak at 388 nm due to ZnO band to band transition. The PL study exhibits emission in the visible region, due to excitonic as well as defect related transitions. The magnetizationfield curve of Er^(3+)doped ZnO nanocrystals showed ferromagnetic property at room-temperature.展开更多
Zn0.99Co0.01O nano-needles are synthesized by using pure ZnO powder as the starting material via chemical reactions in ammonia aqueous solution. The nano-needles show the room-temperature ferromagnetism （RTFM） chara...Zn0.99Co0.01O nano-needles are synthesized by using pure ZnO powder as the starting material via chemical reactions in ammonia aqueous solution. The nano-needles show the room-temperature ferromagnetism （RTFM） characterized by using a superconducting quantum interference device. Non-reductive chemical synthesis steps ensure to prevent forming Co-metal nanoclusters within the doped sample. All the results of thermal gravimetric analysis, Fourier transform infrared spectroscopy, x-ray diffraction and ultraviolet spectroscopy demonstrate that Co ions have doped into ZnO lattices and occupied some Zn sites without changing the wurtzite structure of ZnO lattices, and no potential second phase except for the doped Co ions substituting the Zn sites in ZnO lattice can account for the observed RTFM behaviour. Moreover, the synthesis process is of high reproducibility over 80% which is higher than that of commonly-used sol-gel method.展开更多
This paper has systematically investigated the substrate temperature and thickness dependence of surface morphology and magnetic property of CrAs compound films grown on GaAs by molecular-beam epitaxy. It finds that t...This paper has systematically investigated the substrate temperature and thickness dependence of surface morphology and magnetic property of CrAs compound films grown on GaAs by molecular-beam epitaxy. It finds that the substrate temperature affects the surface morphology and magnetic property of CrAs thin film more potently than the thickness.展开更多
We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixe...We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.展开更多
Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（C...Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.展开更多
Zincblende CrSb （zb-CrSb） layers with room-temperature ferromagnetism have been grown on relaxed and strained （In,Ga）As buffer layers epitaxially prepared on （001） GaAs substrates by molecular-beam epitaxy. The ...Zincblende CrSb （zb-CrSb） layers with room-temperature ferromagnetism have been grown on relaxed and strained （In,Ga）As buffer layers epitaxially prepared on （001） GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction （GID）. The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained （In,Ga）As buffer layers can be increased to ～12 monolayers （～3.6nm）, compared to ,～3 monolayers （～1 nm） on GaAs directly.展开更多
基金Project supported by the National Natural Science Foundation of China(No.11004149)the Seed Foundation of Tianiin University
文摘Room-temperature ferromagnetism was observed in （In0.95-xSnxFe0.05）203 （x = 0-0.09） films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism.
文摘Zinc oxide(ZnO) doped with erbium at different concentrations was synthesized by solid-state reaction method and characterized by X-ray diffraction(XRD), scanning electron microscopic(SEM), UVabsorption spectroscopy, photoluminescence(PL) study and vibrating sample magnetometer. The XRD studies exhibit the presence of wurtzite crystal structure similar to the parent compound ZnO in 1% Er^(3+)doped Zn O,suggesting that doped Er^(3+)ions sit at the regular Zn^(2+)sites. However, same studies spread over the samples with Er^(3+)content>1% reveals the occurrence of secondary phase. SEM images of 1% Er^(3+)doped ZnO show the polycrystalline nature of the synthesized sample. UV-visible absorption spectrum of Er^(3+)doped ZnO nanocrystals shows a strong absorption peak at 388 nm due to ZnO band to band transition. The PL study exhibits emission in the visible region, due to excitonic as well as defect related transitions. The magnetizationfield curve of Er^(3+)doped ZnO nanocrystals showed ferromagnetic property at room-temperature.
基金Supported by the National Natural Science Foundation of China under Grant No 20401001, the Key Project of Anhui Provincial Science and Technology Department under Grant No 04022075, the Project of Anhui Provincial Educational Department under Grant No 2004jq113, and the Fund of Laboratory of Solid State Microstructures, Nanjing University under Grant No M031803.
文摘Zn0.99Co0.01O nano-needles are synthesized by using pure ZnO powder as the starting material via chemical reactions in ammonia aqueous solution. The nano-needles show the room-temperature ferromagnetism （RTFM） characterized by using a superconducting quantum interference device. Non-reductive chemical synthesis steps ensure to prevent forming Co-metal nanoclusters within the doped sample. All the results of thermal gravimetric analysis, Fourier transform infrared spectroscopy, x-ray diffraction and ultraviolet spectroscopy demonstrate that Co ions have doped into ZnO lattices and occupied some Zn sites without changing the wurtzite structure of ZnO lattices, and no potential second phase except for the doped Co ions substituting the Zn sites in ZnO lattice can account for the observed RTFM behaviour. Moreover, the synthesis process is of high reproducibility over 80% which is higher than that of commonly-used sol-gel method.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10334030, 10425419 and 60521001）. Acknowledgments The authors acknowledge Professor Z.C. Niu, Professor F.H. Yang and Professor H.Z. Zheng for useful discussion.
文摘This paper has systematically investigated the substrate temperature and thickness dependence of surface morphology and magnetic property of CrAs compound films grown on GaAs by molecular-beam epitaxy. It finds that the substrate temperature affects the surface morphology and magnetic property of CrAs thin film more potently than the thickness.
基金Supported by the National Key Basic Research and Development Programme of China under Grant No 2001CB610603, the National Natural Science Foundation of China under Grant Nos 10234010 and 50402019, and the New Century Fund for 0utstanding Scholars.
文摘We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11104148,51101088,and 51171082)the Tianjin Natural Science Foundation,China(Grant Nos.14JCZDJC37700 and 13JCQNJC02800)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110031110034)the Fundamental Research Funds for the Central Universities,China
文摘Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.
基金Supported by the National Natural Science Foundation of China under Grant No 10334030, and the Special Funds for Major State Basic Research Project of China under Grant No G2001CB3095, The authors thank Professor Yang Fu-Hua and Wang Yu-Tian for their help in experiments.
文摘Zincblende CrSb （zb-CrSb） layers with room-temperature ferromagnetism have been grown on relaxed and strained （In,Ga）As buffer layers epitaxially prepared on （001） GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction （GID）. The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained （In,Ga）As buffer layers can be increased to ～12 monolayers （～3.6nm）, compared to ,～3 monolayers （～1 nm） on GaAs directly.
