摘要
ZnO基稀磁半导体的磁性来源和机理一直是研究的热点和难点。传统的磁性3d过渡族元素掺杂ZnO容易形成铁磁性的第二相,而非磁性元素掺杂可以很好的避免这一弊端,是研究稀磁半导体磁性来源和机理的理想体系。而且理论计算和实验方面已经报道了室温以上的铁磁性。本文从实验上和理论上综述了非磁性元素掺杂ZnO基稀磁半导体最近的研究进展。
The ferromagnetism origin and mechanism was the continuing research hotspots and difficulty issues in the field of ZnO-based diluted magnetic semiconductors.In general,ferromagnetic 3d transition metals doped ZnO tend to form ferromagnetic secondary phase,while non-magnetic elements doped ZnO will not introduce this problem and have been regarded as ideal system for investigating the ferromagnetism origin and mechanism.Above room-temperature ferromagnetism has been theoretically prectied in such systems.In this paper,the recent progress of non-magnetic elements doped ZnO-based diluted magnetic semiconductor was reviewed.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2011年第4期1048-1052,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(50772122
51002176)
关键词
稀磁半导体
ZNO
非磁性元素掺杂
室温铁磁性
diluted magnetic semiconductors
ZnO
non-magnetic elements doping
room-temperature ferromagnetism
