A silicon carbide （SIC） based metal semiconductor field effect transistor （MESFET） is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to ...A silicon carbide （SIC） based metal semiconductor field effect transistor （MESFET） is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lowerbuffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.展开更多
Cropland productivity has been significantly impacted by soil acidification resulted from nitrogen （N） fertilization, especially as a result of excess ammoniacal N input. With decades＇ intensive agricultural cultiv...Cropland productivity has been significantly impacted by soil acidification resulted from nitrogen （N） fertilization, especially as a result of excess ammoniacal N input. With decades＇ intensive agricultural cultivation and heavy chemical N input in the Huang-Huai-Hai Plain, the impact extent of induced proton input on soil pH in the long term was not yet clear. In this study, acidification rates of different soil layers in the soil profile （0-120 cm） were calculated by pH buffer capacity （pHBC） and net input of protons due to chemical N incorporation. Topsoil （0-20 cm） pH changes of a long-term fertilization field （from 1989） were determined to validate the predicted values. The results showed that the acid and alkali buffer capacities varied significantly in the soil profile, averaged 692 and 39.8 mmolc kg-1 pH-1, respectively. A significant （P〈0.05） correlation was found between pHRC and the content of calcium carbonate. Based on the commonly used application rate of urea （500 kg N ha-1 yr-1）, the induced proton input in this region was predicted to be 16.1 kmol ha-1 yr-1, and nitrification and plant uptake of nitrate were the most important mechanisms for proton producing and consuming, respectively. The acidification rate of topsoil （0-20 cm） was estimated to be 0.01 unit pH yr-1 at the assumed N fertilization level. From 1989 to 2009, topsoil pH （0-20 cm） of the long-term fertilization field decreased from 8.65 to 8.50 for the PK （phosphorus, 150 kg P205 ha-1 yr-1; potassium, 300 kg K20 ha-1 yr-1; without N fertilization）, and 8.30 for NPK （nitrogen, 300 kg N ha-1 yr-1; phosphorus, 150 kg P2Os ha-1 yr-1; potassium, 300 kg K20 ha -1 yr-1）, respectively. Therefore, the apparent soil acidification rate induced by N fertilization equaled to 0.01 unit pH yr-1, which can be a reference to the estimated result, considering the effect of atmospheric N deposition, crop biomass, field management and plant uptake of other nutrients and cations. As protons could be consum展开更多
A new static induction thyristor （SITH） with a strip anode region and p- buffer layer structure （SAP-B） has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly do...A new static induction thyristor （SITH） with a strip anode region and p- buffer layer structure （SAP-B） has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p＋-emitter. Compared with the conventional structure of a buffed-gate with a diffused source region （DSR buffed-gate）, besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-offtime decreased from 0.8 to 0.4μs.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076072)
文摘A silicon carbide （SIC） based metal semiconductor field effect transistor （MESFET） is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lowerbuffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.
基金financially supported by the National Basic Research Program of China (2011CB100506)the China Agriculture Research System-Wheat (CARS-03-02A)+1 种基金the Knowledge Innovation Program of the Chinese Academy of Sciences (KSCX2-EW-N-08)Research Fund of State Key Laboratory of Soil and Sustainable Agriculture, Nanjing Institute of Soil Science, Chinese Academy of Sciences (Y412201401)
文摘Cropland productivity has been significantly impacted by soil acidification resulted from nitrogen （N） fertilization, especially as a result of excess ammoniacal N input. With decades＇ intensive agricultural cultivation and heavy chemical N input in the Huang-Huai-Hai Plain, the impact extent of induced proton input on soil pH in the long term was not yet clear. In this study, acidification rates of different soil layers in the soil profile （0-120 cm） were calculated by pH buffer capacity （pHBC） and net input of protons due to chemical N incorporation. Topsoil （0-20 cm） pH changes of a long-term fertilization field （from 1989） were determined to validate the predicted values. The results showed that the acid and alkali buffer capacities varied significantly in the soil profile, averaged 692 and 39.8 mmolc kg-1 pH-1, respectively. A significant （P〈0.05） correlation was found between pHRC and the content of calcium carbonate. Based on the commonly used application rate of urea （500 kg N ha-1 yr-1）, the induced proton input in this region was predicted to be 16.1 kmol ha-1 yr-1, and nitrification and plant uptake of nitrate were the most important mechanisms for proton producing and consuming, respectively. The acidification rate of topsoil （0-20 cm） was estimated to be 0.01 unit pH yr-1 at the assumed N fertilization level. From 1989 to 2009, topsoil pH （0-20 cm） of the long-term fertilization field decreased from 8.65 to 8.50 for the PK （phosphorus, 150 kg P205 ha-1 yr-1; potassium, 300 kg K20 ha-1 yr-1; without N fertilization）, and 8.30 for NPK （nitrogen, 300 kg N ha-1 yr-1; phosphorus, 150 kg P2Os ha-1 yr-1; potassium, 300 kg K20 ha -1 yr-1）, respectively. Therefore, the apparent soil acidification rate induced by N fertilization equaled to 0.01 unit pH yr-1, which can be a reference to the estimated result, considering the effect of atmospheric N deposition, crop biomass, field management and plant uptake of other nutrients and cations. As protons could be consum
基金supported by the Scientific and Technological Development Plan of Lanzhou City of China(No.2009-1-1).
文摘A new static induction thyristor （SITH） with a strip anode region and p- buffer layer structure （SAP-B） has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p＋-emitter. Compared with the conventional structure of a buffed-gate with a diffused source region （DSR buffed-gate）, besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-offtime decreased from 0.8 to 0.4μs.
