A 320×240 pixel organic-light-emitfing-diode-on-silicon （OLEDoS） driving circuit is implemented using the standard 0.5μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A th...A 320×240 pixel organic-light-emitfing-diode-on-silicon （OLEDoS） driving circuit is implemented using the standard 0.5μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three- transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit＇s power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4 × 28.4μm^2 and the display area is 10.7 × 8.0 mm^2 （the diagonal is about 13 mm）. The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW.展开更多
An 800×600 pixel organic light-emitting diode-on-silicon（OLEDoS） driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between...An 800×600 pixel organic light-emitting diode-on-silicon（OLEDoS） driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA.In order to keep the voltage of the column bus at a relatively high level,the sample-and-hold circuits adopt a ping-pong operation.The driving circuit is fabricated in a commercially available 0.35μm two-poly four-metal 3.3 V mixed-signal CMOS process.The pixel cell area is 15×15μm^2 and the total chip occupies 15.5×12.3 mm^2.Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale（monochrome） display.The total power consumption of the chip is about 85 mW with a 3.3 V supply voltage.展开更多
A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built bas...A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I-V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.展开更多
硅基微显示器以单晶硅为衬底,背板中集成CMOS驱动电路,具有体积小、像素密度高、开关速度快、功耗低等特性,在近眼显示、投影、增强现实/虚拟现实(AR/VR)等领域具有广泛应用。综述数字微镜器件(DMD)、硅基液晶(LCoS)、硅基有机发光(OLED...硅基微显示器以单晶硅为衬底,背板中集成CMOS驱动电路,具有体积小、像素密度高、开关速度快、功耗低等特性,在近眼显示、投影、增强现实/虚拟现实(AR/VR)等领域具有广泛应用。综述数字微镜器件(DMD)、硅基液晶(LCoS)、硅基有机发光(OLED on silicon)、硅基二极管发光(硅基micro-LED)4种硅基微显示器,重点论述硅基OLED和硅基micro-LED的关键技术和研究进展。这些硅基微显示器具有主动发光、高分辨率、高刷新率、高对比度、低功耗等突出特点,在近眼显示领域拥有巨大的应用潜力。展开更多
基金supported by the State Key Development Program for Basic Research of China (No. 2003CB314705)
文摘A 320×240 pixel organic-light-emitfing-diode-on-silicon （OLEDoS） driving circuit is implemented using the standard 0.5μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three- transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit＇s power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4 × 28.4μm^2 and the display area is 10.7 × 8.0 mm^2 （the diagonal is about 13 mm）. The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW.
基金Project supported by the State Key Development Program for Basic Research of China(No.2010CB327701)
文摘An 800×600 pixel organic light-emitting diode-on-silicon（OLEDoS） driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA.In order to keep the voltage of the column bus at a relatively high level,the sample-and-hold circuits adopt a ping-pong operation.The driving circuit is fabricated in a commercially available 0.35μm two-poly four-metal 3.3 V mixed-signal CMOS process.The pixel cell area is 15×15μm^2 and the total chip occupies 15.5×12.3 mm^2.Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale（monochrome） display.The total power consumption of the chip is about 85 mW with a 3.3 V supply voltage.
基金supported by the Major State Basic Research Development Program of China(No.2010CB327701)
文摘A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I-V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.
文摘硅基微显示器以单晶硅为衬底,背板中集成CMOS驱动电路,具有体积小、像素密度高、开关速度快、功耗低等特性,在近眼显示、投影、增强现实/虚拟现实(AR/VR)等领域具有广泛应用。综述数字微镜器件(DMD)、硅基液晶(LCoS)、硅基有机发光(OLED on silicon)、硅基二极管发光(硅基micro-LED)4种硅基微显示器,重点论述硅基OLED和硅基micro-LED的关键技术和研究进展。这些硅基微显示器具有主动发光、高分辨率、高刷新率、高对比度、低功耗等突出特点,在近眼显示领域拥有巨大的应用潜力。
