Heavy doping of the base in HBTs brings about a bandgap narrowing （BGN） effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a the...Heavy doping of the base in HBTs brings about a bandgap narrowing （BGN） effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a thermionic-field-diffusion model that is used to the analyze the performance of an abrupt HBT with a heavydoped base, the conclusion is made that, although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density, the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs. In addition, the BGN effect changes the bias voltage for the onset of Kirk effects.展开更多
For 20 V planar active-gap lateral double-diffused MOSFET （LDMOS）, the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the ...For 20 V planar active-gap lateral double-diffused MOSFET （LDMOS）, the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the conventional single channel. Then the n-drift concentration can be increased to decrease the Kirk effect, while keeping off-state breakdown voltage Vbd unchanged. Meanwhile the influence of the n-drift concentration and the n-drift length Ldrift （the drain n＋ diffusion to gate spacing） which are related to the Kirk effect is discussed. The trade-offs between Rdson.Area, breakdown voltage Vbd and the electrical safe operating area （e-SOA） performance of LDMOS are considered also. Finally the proposed planar active-gap LDMOS devices with varied values of Ldria are experimentally demonstrated. The experimental results show that the Kirk effect can be greatly suppressed with slight increase in the Rdson.Area parameter.展开更多
The effects of the composite-collector structure and the δ-doping density in InGaAs/InP DHBT on the Kirk current have been studied.The effective grade layer in the discretely graded layer goes into the InGaAs setback...The effects of the composite-collector structure and the δ-doping density in InGaAs/InP DHBT on the Kirk current have been studied.The effective grade layer in the discretely graded layer goes into the InGaAs setback layer.The formulas of the maximum doping density,the maximum Kirk current,and the corresponding δ-doping density are derived under different Kirk-effect conditions.Both the maximum collector doping density and the maximum Kirk current are dependent on the δ-doping layer.By opti-mizing the delta doping,the Kirk current density can be greatly increased.展开更多
By using the concept of cone extensions and Dancs-Hegedus-Medvegyev theorem, Ha [Some variants of the Ekeland variational principle for a set-valued map. J. Optim. Theory Appl., 124, 187-206 （2005）] established a ne...By using the concept of cone extensions and Dancs-Hegedus-Medvegyev theorem, Ha [Some variants of the Ekeland variational principle for a set-valued map. J. Optim. Theory Appl., 124, 187-206 （2005）] established a new version of Ekeland＇s variational principle for set-valued maps, which is expressed by the existence of strict approximate minimizer for a set-valued optimization problem. In this paper, we give an improvement of Ha＇s version of set-valued Ekeland＇s variational principle. Our proof is direct and it need not use Dancs-Hegedus-Medvegyev theorem. From the improved Ha＇s version, we deduce a Caristi-Kirk＇s fixed point theorem and a Takahashi＇s nonconvex minimization theorem for set-valued maps. Moreover, we prove that the above three theorems are equivalent to each other.展开更多
In this paper, a modified implicit Kirk-multistep iteration scheme and a strong convergence result for a general class of maps in a normed linear space was established. It was also shown that the convergence of this i...In this paper, a modified implicit Kirk-multistep iteration scheme and a strong convergence result for a general class of maps in a normed linear space was established. It was also shown that the convergence of this iteration scheme is equivalent to the convergency of some other implicit Kirk-type iteration (implicit Kirk-Noor, implicit Kirk-Ishikawa and implicit Kirk-Mann iterations) for the same class of maps. Some numerical examples were considered to show that the equivalence of convergence results to the fixed point is true. The results unify most equivalence results in literature.展开更多
In this paper, we introduce two hybrid iterative algorithms of Jungck-Kirk- Mann （J-K-M） and Jungck-Kirk （J-K） types to obtain some stability results for non- selfmappings by employing a certain general contractiv...In this paper, we introduce two hybrid iterative algorithms of Jungck-Kirk- Mann （J-K-M） and Jungck-Kirk （J-K） types to obtain some stability results for non- selfmappings by employing a certain general contractive condition. Our results generalize and extend most of the existing ones in the literature.展开更多
基金supported by the State Key Development Program for Basic Research of China (No. 2003CB314901)
文摘Heavy doping of the base in HBTs brings about a bandgap narrowing （BGN） effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a thermionic-field-diffusion model that is used to the analyze the performance of an abrupt HBT with a heavydoped base, the conclusion is made that, although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density, the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs. In addition, the BGN effect changes the bias voltage for the onset of Kirk effects.
文摘For 20 V planar active-gap lateral double-diffused MOSFET （LDMOS）, the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the conventional single channel. Then the n-drift concentration can be increased to decrease the Kirk effect, while keeping off-state breakdown voltage Vbd unchanged. Meanwhile the influence of the n-drift concentration and the n-drift length Ldrift （the drain n＋ diffusion to gate spacing） which are related to the Kirk effect is discussed. The trade-offs between Rdson.Area, breakdown voltage Vbd and the electrical safe operating area （e-SOA） performance of LDMOS are considered also. Finally the proposed planar active-gap LDMOS devices with varied values of Ldria are experimentally demonstrated. The experimental results show that the Kirk effect can be greatly suppressed with slight increase in the Rdson.Area parameter.
基金Supported by the National Basic Research Program of China("973")(Grant No.2002CB311902)
文摘The effects of the composite-collector structure and the δ-doping density in InGaAs/InP DHBT on the Kirk current have been studied.The effective grade layer in the discretely graded layer goes into the InGaAs setback layer.The formulas of the maximum doping density,the maximum Kirk current,and the corresponding δ-doping density are derived under different Kirk-effect conditions.Both the maximum collector doping density and the maximum Kirk current are dependent on the δ-doping layer.By opti-mizing the delta doping,the Kirk current density can be greatly increased.
基金Supported by National Natural Science Foundation of China(Grant No.10871141)
文摘By using the concept of cone extensions and Dancs-Hegedus-Medvegyev theorem, Ha [Some variants of the Ekeland variational principle for a set-valued map. J. Optim. Theory Appl., 124, 187-206 （2005）] established a new version of Ekeland＇s variational principle for set-valued maps, which is expressed by the existence of strict approximate minimizer for a set-valued optimization problem. In this paper, we give an improvement of Ha＇s version of set-valued Ekeland＇s variational principle. Our proof is direct and it need not use Dancs-Hegedus-Medvegyev theorem. From the improved Ha＇s version, we deduce a Caristi-Kirk＇s fixed point theorem and a Takahashi＇s nonconvex minimization theorem for set-valued maps. Moreover, we prove that the above three theorems are equivalent to each other.
文摘In this paper, a modified implicit Kirk-multistep iteration scheme and a strong convergence result for a general class of maps in a normed linear space was established. It was also shown that the convergence of this iteration scheme is equivalent to the convergency of some other implicit Kirk-type iteration (implicit Kirk-Noor, implicit Kirk-Ishikawa and implicit Kirk-Mann iterations) for the same class of maps. Some numerical examples were considered to show that the equivalence of convergence results to the fixed point is true. The results unify most equivalence results in literature.
文摘In this paper, we introduce two hybrid iterative algorithms of Jungck-Kirk- Mann （J-K-M） and Jungck-Kirk （J-K） types to obtain some stability results for non- selfmappings by employing a certain general contractive condition. Our results generalize and extend most of the existing ones in the literature.
