A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive de...A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive devices （IPD） technology, which is developed for cellular applications. The antenna switch module （ASM） features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.展开更多
由于集成无源器件(IPD)工艺可与集成电路平面工艺兼容,IPD工艺设计的无源器件易集成到集成电路芯片中,有利于电子设备小型化和可靠性的提高。基于IPD工艺,采用等效电路取代14λ传输线的设计方法,分别设计了一个同相和一个反相3 d B射频...由于集成无源器件(IPD)工艺可与集成电路平面工艺兼容,IPD工艺设计的无源器件易集成到集成电路芯片中,有利于电子设备小型化和可靠性的提高。基于IPD工艺,采用等效电路取代14λ传输线的设计方法,分别设计了一个同相和一个反相3 d B射频功率分配器。同相功率分配器的实测结果显示插入损耗约为3.7 d B,隔离度约为25 d B,性能与威尔金森结构功率分配器接近,封装后的尺寸为1.6 mm×0.8 mm,小于威尔金森结构功率分配器。反相功率分配器仿真结果表明插入损耗小于4.2 d B,隔离度约为25 d B。该功率分配器可应用到移动通信终端。展开更多
The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band pow...The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band power divider is reduced to 1.03 × 0.98 mm2. Its measured results show an operating fractional bandwidth of 54%, and return losses and isolation of greater than 20 dB. In addition the excess insertion loss is less than 1.1 dB. More- over the good features contain amplitude and phase equilibrium with the values of better than 0.03 dB and 1.5° separately. This miniaturized power divider could be widely used in RF/microwave circuit systems.展开更多
文摘A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive devices （IPD） technology, which is developed for cellular applications. The antenna switch module （ASM） features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.
文摘由于集成无源器件(IPD)工艺可与集成电路平面工艺兼容,IPD工艺设计的无源器件易集成到集成电路芯片中,有利于电子设备小型化和可靠性的提高。基于IPD工艺,采用等效电路取代14λ传输线的设计方法,分别设计了一个同相和一个反相3 d B射频功率分配器。同相功率分配器的实测结果显示插入损耗约为3.7 d B,隔离度约为25 d B,性能与威尔金森结构功率分配器接近,封装后的尺寸为1.6 mm×0.8 mm,小于威尔金森结构功率分配器。反相功率分配器仿真结果表明插入损耗小于4.2 d B,隔离度约为25 d B。该功率分配器可应用到移动通信终端。
基金supported by the National Key Basic Research Program of China(No.2014CB339901)
文摘The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band power divider is reduced to 1.03 × 0.98 mm2. Its measured results show an operating fractional bandwidth of 54%, and return losses and isolation of greater than 20 dB. In addition the excess insertion loss is less than 1.1 dB. More- over the good features contain amplitude and phase equilibrium with the values of better than 0.03 dB and 1.5° separately. This miniaturized power divider could be widely used in RF/microwave circuit systems.
