摘要
The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band power divider is reduced to 1.03 × 0.98 mm2. Its measured results show an operating fractional bandwidth of 54%, and return losses and isolation of greater than 20 dB. In addition the excess insertion loss is less than 1.1 dB. More- over the good features contain amplitude and phase equilibrium with the values of better than 0.03 dB and 1.5° separately. This miniaturized power divider could be widely used in RF/microwave circuit systems.
The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band power divider is reduced to 1.03 × 0.98 mm2. Its measured results show an operating fractional bandwidth of 54%, and return losses and isolation of greater than 20 dB. In addition the excess insertion loss is less than 1.1 dB. More- over the good features contain amplitude and phase equilibrium with the values of better than 0.03 dB and 1.5° separately. This miniaturized power divider could be widely used in RF/microwave circuit systems.
基金
supported by the National Key Basic Research Program of China(No.2014CB339901)
