We report the current-voltage （I-V） characteristics of individual polypyrrole nanotubes and poly（3,4- ethylenedioxythiophene） （PEDOT） nanowires in a temperature range from 300 K to 2 K. Considering the complex s...We report the current-voltage （I-V） characteristics of individual polypyrrole nanotubes and poly（3,4- ethylenedioxythiophene） （PEDOT） nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling （FIT） and thermal excitation model （Kaiser expression） to fit the temperature and electric-field dependent I-V curves. It is found that the I-V data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation （or zero-bias conductance suppression） could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition, similar I--V characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.展开更多
SnS/CdS heterojunction is a promising system for photovoltaic application. SnS thin films were thermally evaporated onto CdS/ITO coated glass substrates. The structure of the device was glass/ ITO/CdS/SnS/In/Ag and I-...SnS/CdS heterojunction is a promising system for photovoltaic application. SnS thin films were thermally evaporated onto CdS/ITO coated glass substrates. The structure of the device was glass/ ITO/CdS/SnS/In/Ag and I-V curves of the fabricated devices were measured under dark and illuminated conditions, respectively. We discussed the relationship of the thickness and annealing temperature of CdS buffer layers with the performance of SnS/CdS heterojunctions. The optimum thickness and annealing temperature of the CdS buffer layers were 50 nm and 350°C, respectively. The best device had a conversion efficiency of 0.0025%.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No 10604038)the Program for New Century Excellent Talents in University of China (Grant No NCET-07-0472)
文摘We report the current-voltage （I-V） characteristics of individual polypyrrole nanotubes and poly（3,4- ethylenedioxythiophene） （PEDOT） nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling （FIT） and thermal excitation model （Kaiser expression） to fit the temperature and electric-field dependent I-V curves. It is found that the I-V data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation （or zero-bias conductance suppression） could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition, similar I--V characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.
文摘SnS/CdS heterojunction is a promising system for photovoltaic application. SnS thin films were thermally evaporated onto CdS/ITO coated glass substrates. The structure of the device was glass/ ITO/CdS/SnS/In/Ag and I-V curves of the fabricated devices were measured under dark and illuminated conditions, respectively. We discussed the relationship of the thickness and annealing temperature of CdS buffer layers with the performance of SnS/CdS heterojunctions. The optimum thickness and annealing temperature of the CdS buffer layers were 50 nm and 350°C, respectively. The best device had a conversion efficiency of 0.0025%.
