摘要
在扫描电镜中,采用纳米微操纵仪构成一个2探针电流-电压(I-V)测试装置。测试了单根ZnO纳米线接触钨电极构成的金属-半导体-金属(M-S-M)结的I-V特征曲线。ZnO纳米线的I-V曲线呈现出较弱的肖特基特性。研究了电子束辐照对ZnO纳米线的I-V曲线的影响。30 keV电子束辐照使ZnO纳米线的总电阻减小。计算得到ZnO纳米线的电导率σ=0.24S/cm,载流子浓度n=1.64×1016cm-3。为了对比,还测试了单根碳纤维接触钨电极的I-V特征曲线。在30 keV电子束辐照下,碳纤维的总电阻保持不变,电导率σ=22 S/cm。
The metal-semiconductor-metal junction（M-S-M） was fabricated with an individual ZnO nanowire connected with a tungsten electrode. Its current-voltage （I-V） characteristics were in-situ measured with a combination of scanning electron microscopy （SEM） and a lab-buih micro-manipulator capable of manipulating things on nanometer scale. The weak rectification was observed in the I- V curve. Interesting finding is that the irradiation of an electron beam of the M-S-M junction significantly affects its I-V characteristics. For example, with an electon irradiation energy of 30 keV, the total resistance of the ZnO nano-wire decreases, and its calculated conductance and its carrier density are found to be σ = 0.24 S/cm and n = 1.64 ×10^16cm^-3, respectively. In contrast, the I-V characteristics of a single carbon fiber closely contacted with a tungsten electrode before and after the electron irradiation of 30 keV show that the total resistance remain unchanged with a conductance of σ = 22 S/cm.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2008年第4期303-307,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(No.60171024)
北京市教委基金项目(No.KM200610005030)
